Plasma pretreatment on Si(1 1 1) substrates for the growth of ZnO thin films
ZnO films have been grown on Si(1 1 1) substrates by metal-organic chemical vapor deposition. The Si substrates were pretreated by the Ar + plasma bombardment before the ZnO growth for the purpose of eliminating the remnant amorphous silica layers from the substrates’ surface. The effects of the pla...
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Veröffentlicht in: | Journal of crystal growth 2007-05, Vol.303 (2), p.655-658 |
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Format: | Artikel |
Sprache: | eng |
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