Annihilation mechanism of threading dislocations in AlN grown by growth form modification method using V/III ratio

High-quality AlN layers with atomically flat surface were grown on a c-plane sapphire substrate by high-temperature metal-organic vapor phase epitaxy (HT-MOVPE). Controlling V/III ratio during growth led to change the growth rate for each facet resulting in the change of the macroscopic form of grai...

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