Annihilation mechanism of threading dislocations in AlN grown by growth form modification method using V/III ratio

High-quality AlN layers with atomically flat surface were grown on a c-plane sapphire substrate by high-temperature metal-organic vapor phase epitaxy (HT-MOVPE). Controlling V/III ratio during growth led to change the growth rate for each facet resulting in the change of the macroscopic form of grai...

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Veröffentlicht in:Journal of crystal growth 2007-03, Vol.300 (1), p.136-140
Hauptverfasser: Imura, Masataka, Fujimoto, Naoki, Okada, Narihito, Balakrishnan, Krishnan, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Noro, Tadashi, Takagi, Takashi, Bandoh, Akira
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container_end_page 140
container_issue 1
container_start_page 136
container_title Journal of crystal growth
container_volume 300
creator Imura, Masataka
Fujimoto, Naoki
Okada, Narihito
Balakrishnan, Krishnan
Iwaya, Motoaki
Kamiyama, Satoshi
Amano, Hiroshi
Akasaki, Isamu
Noro, Tadashi
Takagi, Takashi
Bandoh, Akira
description High-quality AlN layers with atomically flat surface were grown on a c-plane sapphire substrate by high-temperature metal-organic vapor phase epitaxy (HT-MOVPE). Controlling V/III ratio during growth led to change the growth rate for each facet resulting in the change of the macroscopic form of grain at the transition V/III ratio. The threading dislocations were annihilated with the formation of dislocation loops at the changing of grain form. AlN crystallinity was improved due to the reason that small AlN grains were incorporated by the big AlN grains during growth. These phenomena were confirmed by transmission electron microscopy (TEM) and atomic force microscopy (AFM).
doi_str_mv 10.1016/j.jcrysgro.2006.11.013
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subjects A1. TEM
A1. Threading dislocations
A1. V/III ratio
A3. HT-MOVPE
B1. AIN
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Growth from vapor
Materials science
Methods of crystal growth
physics of crystal growth
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Theory and models of film growth
Vapor phase epitaxy
growth from vapor phase
title Annihilation mechanism of threading dislocations in AlN grown by growth form modification method using V/III ratio
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