Annihilation mechanism of threading dislocations in AlN grown by growth form modification method using V/III ratio
High-quality AlN layers with atomically flat surface were grown on a c-plane sapphire substrate by high-temperature metal-organic vapor phase epitaxy (HT-MOVPE). Controlling V/III ratio during growth led to change the growth rate for each facet resulting in the change of the macroscopic form of grai...
Gespeichert in:
Veröffentlicht in: | Journal of crystal growth 2007-03, Vol.300 (1), p.136-140 |
---|---|
Hauptverfasser: | , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 140 |
---|---|
container_issue | 1 |
container_start_page | 136 |
container_title | Journal of crystal growth |
container_volume | 300 |
creator | Imura, Masataka Fujimoto, Naoki Okada, Narihito Balakrishnan, Krishnan Iwaya, Motoaki Kamiyama, Satoshi Amano, Hiroshi Akasaki, Isamu Noro, Tadashi Takagi, Takashi Bandoh, Akira |
description | High-quality AlN layers with atomically flat surface were grown on a
c-plane sapphire substrate by high-temperature metal-organic vapor phase epitaxy (HT-MOVPE). Controlling V/III ratio during growth led to change the growth rate for each facet resulting in the change of the macroscopic form of grain at the transition V/III ratio. The threading dislocations were annihilated with the formation of dislocation loops at the changing of grain form. AlN crystallinity was improved due to the reason that small AlN grains were incorporated by the big AlN grains during growth. These phenomena were confirmed by transmission electron microscopy (TEM) and atomic force microscopy (AFM). |
doi_str_mv | 10.1016/j.jcrysgro.2006.11.013 |
format | Article |
fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_29891861</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0022024806012061</els_id><sourcerecordid>29891861</sourcerecordid><originalsourceid>FETCH-LOGICAL-c439t-2e10bb3876b6dc1a3b0af5406ca24d78163c62a197e156dd182c2354ed8abece3</originalsourceid><addsrcrecordid>eNqFkE9vEzEQxS0EEqHwFZAvcNutx944zo2o4k-kCi7A1fKOZ7uOdu1ib0D59jhNK45cPJb8e-95HmNvQbQgQF8f2gPmU7nLqZVC6BagFaCesRWYjWrWQsjnbFVP2QjZmZfsVSkHIaoSxIrlXYxhDJNbQop8JhxdDGXmaeDLmMn5EO-4D2VK-IAUHiLfTV95jfsTeX96uCwjH1Ke-Zx8GAI-mS1j8vxYzhY_r_f7Pc_nl9fsxeCmQm8e5xX78enj95svze23z_ub3W2DndoujSQQfa_MRvfaIzjVCzesO6HRyc5vDGiFWjrYbgjW2nswEqVad-SN6wlJXbH3F9_7nH4dqSx2DgVpmlykdCxWbs0WjIYK6guIOZWSabD3OcwunywIe67YHuxTxfZcsQWwteIqfPeY4Aq6acguYij_1Ear-iFRuQ8Xjuq6vwNlWzBQRPIhEy7Wp_C_qL8Q6Zd1</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>29891861</pqid></control><display><type>article</type><title>Annihilation mechanism of threading dislocations in AlN grown by growth form modification method using V/III ratio</title><source>Elsevier ScienceDirect Journals</source><creator>Imura, Masataka ; Fujimoto, Naoki ; Okada, Narihito ; Balakrishnan, Krishnan ; Iwaya, Motoaki ; Kamiyama, Satoshi ; Amano, Hiroshi ; Akasaki, Isamu ; Noro, Tadashi ; Takagi, Takashi ; Bandoh, Akira</creator><creatorcontrib>Imura, Masataka ; Fujimoto, Naoki ; Okada, Narihito ; Balakrishnan, Krishnan ; Iwaya, Motoaki ; Kamiyama, Satoshi ; Amano, Hiroshi ; Akasaki, Isamu ; Noro, Tadashi ; Takagi, Takashi ; Bandoh, Akira</creatorcontrib><description>High-quality AlN layers with atomically flat surface were grown on a
c-plane sapphire substrate by high-temperature metal-organic vapor phase epitaxy (HT-MOVPE). Controlling V/III ratio during growth led to change the growth rate for each facet resulting in the change of the macroscopic form of grain at the transition V/III ratio. The threading dislocations were annihilated with the formation of dislocation loops at the changing of grain form. AlN crystallinity was improved due to the reason that small AlN grains were incorporated by the big AlN grains during growth. These phenomena were confirmed by transmission electron microscopy (TEM) and atomic force microscopy (AFM).</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2006.11.013</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. TEM ; A1. Threading dislocations ; A1. V/III ratio ; A3. HT-MOVPE ; B1. AIN ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Growth from vapor ; Materials science ; Methods of crystal growth; physics of crystal growth ; Methods of deposition of films and coatings; film growth and epitaxy ; Physics ; Theory and models of film growth ; Vapor phase epitaxy; growth from vapor phase</subject><ispartof>Journal of crystal growth, 2007-03, Vol.300 (1), p.136-140</ispartof><rights>2006 Elsevier B.V.</rights><rights>2007 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c439t-2e10bb3876b6dc1a3b0af5406ca24d78163c62a197e156dd182c2354ed8abece3</citedby><cites>FETCH-LOGICAL-c439t-2e10bb3876b6dc1a3b0af5406ca24d78163c62a197e156dd182c2354ed8abece3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jcrysgro.2006.11.013$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,3536,23910,23911,25119,27903,27904,45974</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=18633540$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Imura, Masataka</creatorcontrib><creatorcontrib>Fujimoto, Naoki</creatorcontrib><creatorcontrib>Okada, Narihito</creatorcontrib><creatorcontrib>Balakrishnan, Krishnan</creatorcontrib><creatorcontrib>Iwaya, Motoaki</creatorcontrib><creatorcontrib>Kamiyama, Satoshi</creatorcontrib><creatorcontrib>Amano, Hiroshi</creatorcontrib><creatorcontrib>Akasaki, Isamu</creatorcontrib><creatorcontrib>Noro, Tadashi</creatorcontrib><creatorcontrib>Takagi, Takashi</creatorcontrib><creatorcontrib>Bandoh, Akira</creatorcontrib><title>Annihilation mechanism of threading dislocations in AlN grown by growth form modification method using V/III ratio</title><title>Journal of crystal growth</title><description>High-quality AlN layers with atomically flat surface were grown on a
c-plane sapphire substrate by high-temperature metal-organic vapor phase epitaxy (HT-MOVPE). Controlling V/III ratio during growth led to change the growth rate for each facet resulting in the change of the macroscopic form of grain at the transition V/III ratio. The threading dislocations were annihilated with the formation of dislocation loops at the changing of grain form. AlN crystallinity was improved due to the reason that small AlN grains were incorporated by the big AlN grains during growth. These phenomena were confirmed by transmission electron microscopy (TEM) and atomic force microscopy (AFM).</description><subject>A1. TEM</subject><subject>A1. Threading dislocations</subject><subject>A1. V/III ratio</subject><subject>A3. HT-MOVPE</subject><subject>B1. AIN</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Growth from vapor</subject><subject>Materials science</subject><subject>Methods of crystal growth; physics of crystal growth</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Physics</subject><subject>Theory and models of film growth</subject><subject>Vapor phase epitaxy; growth from vapor phase</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNqFkE9vEzEQxS0EEqHwFZAvcNutx944zo2o4k-kCi7A1fKOZ7uOdu1ib0D59jhNK45cPJb8e-95HmNvQbQgQF8f2gPmU7nLqZVC6BagFaCesRWYjWrWQsjnbFVP2QjZmZfsVSkHIaoSxIrlXYxhDJNbQop8JhxdDGXmaeDLmMn5EO-4D2VK-IAUHiLfTV95jfsTeX96uCwjH1Ke-Zx8GAI-mS1j8vxYzhY_r_f7Pc_nl9fsxeCmQm8e5xX78enj95svze23z_ub3W2DndoujSQQfa_MRvfaIzjVCzesO6HRyc5vDGiFWjrYbgjW2nswEqVad-SN6wlJXbH3F9_7nH4dqSx2DgVpmlykdCxWbs0WjIYK6guIOZWSabD3OcwunywIe67YHuxTxfZcsQWwteIqfPeY4Aq6acguYij_1Ear-iFRuQ8Xjuq6vwNlWzBQRPIhEy7Wp_C_qL8Q6Zd1</recordid><startdate>20070301</startdate><enddate>20070301</enddate><creator>Imura, Masataka</creator><creator>Fujimoto, Naoki</creator><creator>Okada, Narihito</creator><creator>Balakrishnan, Krishnan</creator><creator>Iwaya, Motoaki</creator><creator>Kamiyama, Satoshi</creator><creator>Amano, Hiroshi</creator><creator>Akasaki, Isamu</creator><creator>Noro, Tadashi</creator><creator>Takagi, Takashi</creator><creator>Bandoh, Akira</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20070301</creationdate><title>Annihilation mechanism of threading dislocations in AlN grown by growth form modification method using V/III ratio</title><author>Imura, Masataka ; Fujimoto, Naoki ; Okada, Narihito ; Balakrishnan, Krishnan ; Iwaya, Motoaki ; Kamiyama, Satoshi ; Amano, Hiroshi ; Akasaki, Isamu ; Noro, Tadashi ; Takagi, Takashi ; Bandoh, Akira</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c439t-2e10bb3876b6dc1a3b0af5406ca24d78163c62a197e156dd182c2354ed8abece3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>A1. TEM</topic><topic>A1. Threading dislocations</topic><topic>A1. V/III ratio</topic><topic>A3. HT-MOVPE</topic><topic>B1. AIN</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Growth from vapor</topic><topic>Materials science</topic><topic>Methods of crystal growth; physics of crystal growth</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Physics</topic><topic>Theory and models of film growth</topic><topic>Vapor phase epitaxy; growth from vapor phase</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Imura, Masataka</creatorcontrib><creatorcontrib>Fujimoto, Naoki</creatorcontrib><creatorcontrib>Okada, Narihito</creatorcontrib><creatorcontrib>Balakrishnan, Krishnan</creatorcontrib><creatorcontrib>Iwaya, Motoaki</creatorcontrib><creatorcontrib>Kamiyama, Satoshi</creatorcontrib><creatorcontrib>Amano, Hiroshi</creatorcontrib><creatorcontrib>Akasaki, Isamu</creatorcontrib><creatorcontrib>Noro, Tadashi</creatorcontrib><creatorcontrib>Takagi, Takashi</creatorcontrib><creatorcontrib>Bandoh, Akira</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Imura, Masataka</au><au>Fujimoto, Naoki</au><au>Okada, Narihito</au><au>Balakrishnan, Krishnan</au><au>Iwaya, Motoaki</au><au>Kamiyama, Satoshi</au><au>Amano, Hiroshi</au><au>Akasaki, Isamu</au><au>Noro, Tadashi</au><au>Takagi, Takashi</au><au>Bandoh, Akira</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Annihilation mechanism of threading dislocations in AlN grown by growth form modification method using V/III ratio</atitle><jtitle>Journal of crystal growth</jtitle><date>2007-03-01</date><risdate>2007</risdate><volume>300</volume><issue>1</issue><spage>136</spage><epage>140</epage><pages>136-140</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>High-quality AlN layers with atomically flat surface were grown on a
c-plane sapphire substrate by high-temperature metal-organic vapor phase epitaxy (HT-MOVPE). Controlling V/III ratio during growth led to change the growth rate for each facet resulting in the change of the macroscopic form of grain at the transition V/III ratio. The threading dislocations were annihilated with the formation of dislocation loops at the changing of grain form. AlN crystallinity was improved due to the reason that small AlN grains were incorporated by the big AlN grains during growth. These phenomena were confirmed by transmission electron microscopy (TEM) and atomic force microscopy (AFM).</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2006.11.013</doi><tpages>5</tpages></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0022-0248 |
ispartof | Journal of crystal growth, 2007-03, Vol.300 (1), p.136-140 |
issn | 0022-0248 1873-5002 |
language | eng |
recordid | cdi_proquest_miscellaneous_29891861 |
source | Elsevier ScienceDirect Journals |
subjects | A1. TEM A1. Threading dislocations A1. V/III ratio A3. HT-MOVPE B1. AIN Cross-disciplinary physics: materials science rheology Exact sciences and technology Growth from vapor Materials science Methods of crystal growth physics of crystal growth Methods of deposition of films and coatings film growth and epitaxy Physics Theory and models of film growth Vapor phase epitaxy growth from vapor phase |
title | Annihilation mechanism of threading dislocations in AlN grown by growth form modification method using V/III ratio |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-22T08%3A43%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Annihilation%20mechanism%20of%20threading%20dislocations%20in%20AlN%20grown%20by%20growth%20form%20modification%20method%20using%20V/III%20ratio&rft.jtitle=Journal%20of%20crystal%20growth&rft.au=Imura,%20Masataka&rft.date=2007-03-01&rft.volume=300&rft.issue=1&rft.spage=136&rft.epage=140&rft.pages=136-140&rft.issn=0022-0248&rft.eissn=1873-5002&rft.coden=JCRGAE&rft_id=info:doi/10.1016/j.jcrysgro.2006.11.013&rft_dat=%3Cproquest_cross%3E29891861%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=29891861&rft_id=info:pmid/&rft_els_id=S0022024806012061&rfr_iscdi=true |