Intersubband emission and carrier dynamics in GaAs/AlGaAs tunnel-coupled quantum wells after ultrafast optical pumping

Intersubband emission and carrier dynamics in GaAs/AlGaAs tunnel-coupled quantum wells after ultrafast optical pumping

Optical mid-infrared (MIR) gain in n-doped tunnel-coupled semiconductor quantum well structures is studied at a sample temperature of 20 K. The structure is excited via the e1-e3, intersubband transition by an ultrashort MIR pulse and the gain at the e2-e3 transition frequency is monitored by a seco...

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Hauptverfasser: Hanna, Stefan, Silz, Wolfgang, Panevin, Vadim Yu, Shalygin, Vadim A, Vorobjev, Leonid E, Firsov, Dmitry A, Seilmeier, Alois, Zhukov, Alexey E, Ustinov, Victor M
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container_volume 893
creator Hanna, Stefan
Silz, Wolfgang
Panevin, Vadim Yu
Shalygin, Vadim A
Vorobjev, Leonid E
Firsov, Dmitry A
Seilmeier, Alois
Zhukov, Alexey E
Ustinov, Victor M
description Optical mid-infrared (MIR) gain in n-doped tunnel-coupled semiconductor quantum well structures is studied at a sample temperature of 20 K. The structure is excited via the e1-e3, intersubband transition by an ultrashort MIR pulse and the gain at the e2-e3 transition frequency is monitored by a second time-delayed tunable pulse in the MIR. At high pump intensities, even a narrow MIR emission band is found at the e2-e3 transition frequency.
doi_str_mv 10.1063/1.2729974
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title Intersubband emission and carrier dynamics in GaAs/AlGaAs tunnel-coupled quantum wells after ultrafast optical pumping
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