Electrical properties of undoped bulk ZnO substrates
Undoped bulk ZnO crystals obtained from Tokyo Denpa show either resistive behavior [(5 × 10^sup 4^)-(3 × 10^sup 5^) Ohm cm) or low n-type conductivity (n ≈ 10^sup 14^ cm^sup -3^) with mobilities in the latter case of 130-150 cm^sup 2^/V sec. The variation in resistivity may be related to the thermal...
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| Veröffentlicht in: | Journal of electronic materials 2006-04, Vol.35 (4), p.663-669 |
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| creator | Polyakov, A. Y. Smirnov, N. B. Govorkov, A. V. Kozhukhova, E. A. Pearton, S. J. Norton, D. P. Osinsky, A. Dabiran, Amir |
| description | Undoped bulk ZnO crystals obtained from Tokyo Denpa show either resistive behavior [(5 × 10^sup 4^)-(3 × 10^sup 5^) Ohm cm) or low n-type conductivity (n ≈ 10^sup 14^ cm^sup -3^) with mobilities in the latter case of 130-150 cm^sup 2^/V sec. The variation in resistivity may be related to the thermal instability of Li that is present in the samples. The Fermi level is pinned by 90-meV shallow donors that are deeper than the 70 meV and hydrogen-related 35-meV shallow donors in Eagle Pitcher and Cermet substrates. In all three cases, 0.3-eV electron traps are very prominent, and in the Tokyo Denpa material they dominate the high-temperature capacitance-frequency characteristics. The concentration of these traps, on the order of 2 × 10^sup 15^ cm^sup -3^, is about 20 times higher in the Tokyo Denpa ZnO compared to the two other materials. The other electron traps at E^sub c^ -0.2 eV commonly observed in undoped n-ZnO are not detected in conducting Tokyo Denpa ZnO samples, but they may be traps that pin the Fermi level in the more compensated high-resistivity samples. [PUBLICATION ABSTRACT] |
| doi_str_mv | 10.1007/s11664-006-0117-x |
| format | Article |
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Y. ; Smirnov, N. B. ; Govorkov, A. V. ; Kozhukhova, E. A. ; Pearton, S. J. ; Norton, D. P. ; Osinsky, A. ; Dabiran, Amir</creator><creatorcontrib>Polyakov, A. Y. ; Smirnov, N. B. ; Govorkov, A. V. ; Kozhukhova, E. A. ; Pearton, S. J. ; Norton, D. P. ; Osinsky, A. ; Dabiran, Amir</creatorcontrib><description>Undoped bulk ZnO crystals obtained from Tokyo Denpa show either resistive behavior [(5 × 10^sup 4^)-(3 × 10^sup 5^) Ohm cm) or low n-type conductivity (n ≈ 10^sup 14^ cm^sup -3^) with mobilities in the latter case of 130-150 cm^sup 2^/V sec. The variation in resistivity may be related to the thermal instability of Li that is present in the samples. The Fermi level is pinned by 90-meV shallow donors that are deeper than the 70 meV and hydrogen-related 35-meV shallow donors in Eagle Pitcher and Cermet substrates. In all three cases, 0.3-eV electron traps are very prominent, and in the Tokyo Denpa material they dominate the high-temperature capacitance-frequency characteristics. The concentration of these traps, on the order of 2 × 10^sup 15^ cm^sup -3^, is about 20 times higher in the Tokyo Denpa ZnO compared to the two other materials. The other electron traps at E^sub c^ -0.2 eV commonly observed in undoped n-ZnO are not detected in conducting Tokyo Denpa ZnO samples, but they may be traps that pin the Fermi level in the more compensated high-resistivity samples. [PUBLICATION ABSTRACT]</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-006-0117-x</identifier><identifier>CODEN: JECMA5</identifier><language>eng</language><publisher>Warrendale: Springer Nature B.V</publisher><subject>Cermets ; Crystals ; Diodes ; Electric resistance ; Electrical properties ; Electrical resistivity ; Electron traps ; Fermi level ; High temperature ; Physical properties ; Semiconductor doping ; Substrates ; Thermal instability ; Zinc oxide ; Zinc oxides</subject><ispartof>Journal of electronic materials, 2006-04, Vol.35 (4), p.663-669</ispartof><rights>Copyright Minerals, Metals & Materials Society Apr 2006</rights><rights>TMS-The Minerals, Metals and Materials Society 2006.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c331t-614aa5c3180b5d3a08c6b755b501e756e9c59397ad27f5c287ad9eab55216e943</citedby><cites>FETCH-LOGICAL-c331t-614aa5c3180b5d3a08c6b755b501e756e9c59397ad27f5c287ad9eab55216e943</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Polyakov, A. Y.</creatorcontrib><creatorcontrib>Smirnov, N. B.</creatorcontrib><creatorcontrib>Govorkov, A. V.</creatorcontrib><creatorcontrib>Kozhukhova, E. A.</creatorcontrib><creatorcontrib>Pearton, S. J.</creatorcontrib><creatorcontrib>Norton, D. P.</creatorcontrib><creatorcontrib>Osinsky, A.</creatorcontrib><creatorcontrib>Dabiran, Amir</creatorcontrib><title>Electrical properties of undoped bulk ZnO substrates</title><title>Journal of electronic materials</title><description>Undoped bulk ZnO crystals obtained from Tokyo Denpa show either resistive behavior [(5 × 10^sup 4^)-(3 × 10^sup 5^) Ohm cm) or low n-type conductivity (n ≈ 10^sup 14^ cm^sup -3^) with mobilities in the latter case of 130-150 cm^sup 2^/V sec. The variation in resistivity may be related to the thermal instability of Li that is present in the samples. The Fermi level is pinned by 90-meV shallow donors that are deeper than the 70 meV and hydrogen-related 35-meV shallow donors in Eagle Pitcher and Cermet substrates. In all three cases, 0.3-eV electron traps are very prominent, and in the Tokyo Denpa material they dominate the high-temperature capacitance-frequency characteristics. The concentration of these traps, on the order of 2 × 10^sup 15^ cm^sup -3^, is about 20 times higher in the Tokyo Denpa ZnO compared to the two other materials. The other electron traps at E^sub c^ -0.2 eV commonly observed in undoped n-ZnO are not detected in conducting Tokyo Denpa ZnO samples, but they may be traps that pin the Fermi level in the more compensated high-resistivity samples. [PUBLICATION ABSTRACT]</description><subject>Cermets</subject><subject>Crystals</subject><subject>Diodes</subject><subject>Electric resistance</subject><subject>Electrical properties</subject><subject>Electrical resistivity</subject><subject>Electron traps</subject><subject>Fermi level</subject><subject>High temperature</subject><subject>Physical properties</subject><subject>Semiconductor doping</subject><subject>Substrates</subject><subject>Thermal instability</subject><subject>Zinc oxide</subject><subject>Zinc oxides</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><sourceid>8G5</sourceid><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNp1kE1LxDAQhoMouH78AG9FwVt0pukk6VGW9QMW9qIgXkKaptC1265JC-u_N8t6EjzNDO_D8PIwdoVwhwDqPiJKWXAAyQFR8d0RmyEVgqOW78dsBkIip1zQKTuLcQ2AhBpnrFh03o2hdbbLtmHY-jC2PmZDk019nc46q6buM_voV1mcqjgGO_p4wU4a20V_-TvP2dvj4nX-zJerp5f5w5I7IXDkEgtryQnUUFEtLGgnK0VUEaBXJH3pqBSlsnWuGnK5TlvpbUWUYwoLcc5uD39Ts6_Jx9Fs2uh819neD1M0eamVyCUl8OYPuB6m0KduJk9aZKlJQKKu_6WgUARSqAThAXJhiDH4xmxDu7Hh2yCYvWpzUG2SarNXbXbiB0gqb3s</recordid><startdate>20060401</startdate><enddate>20060401</enddate><creator>Polyakov, A. 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Y.</au><au>Smirnov, N. B.</au><au>Govorkov, A. V.</au><au>Kozhukhova, E. A.</au><au>Pearton, S. J.</au><au>Norton, D. P.</au><au>Osinsky, A.</au><au>Dabiran, Amir</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrical properties of undoped bulk ZnO substrates</atitle><jtitle>Journal of electronic materials</jtitle><date>2006-04-01</date><risdate>2006</risdate><volume>35</volume><issue>4</issue><spage>663</spage><epage>669</epage><pages>663-669</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><coden>JECMA5</coden><abstract>Undoped bulk ZnO crystals obtained from Tokyo Denpa show either resistive behavior [(5 × 10^sup 4^)-(3 × 10^sup 5^) Ohm cm) or low n-type conductivity (n ≈ 10^sup 14^ cm^sup -3^) with mobilities in the latter case of 130-150 cm^sup 2^/V sec. The variation in resistivity may be related to the thermal instability of Li that is present in the samples. The Fermi level is pinned by 90-meV shallow donors that are deeper than the 70 meV and hydrogen-related 35-meV shallow donors in Eagle Pitcher and Cermet substrates. In all three cases, 0.3-eV electron traps are very prominent, and in the Tokyo Denpa material they dominate the high-temperature capacitance-frequency characteristics. The concentration of these traps, on the order of 2 × 10^sup 15^ cm^sup -3^, is about 20 times higher in the Tokyo Denpa ZnO compared to the two other materials. The other electron traps at E^sub c^ -0.2 eV commonly observed in undoped n-ZnO are not detected in conducting Tokyo Denpa ZnO samples, but they may be traps that pin the Fermi level in the more compensated high-resistivity samples. [PUBLICATION ABSTRACT]</abstract><cop>Warrendale</cop><pub>Springer Nature B.V</pub><doi>10.1007/s11664-006-0117-x</doi><tpages>7</tpages></addata></record> |
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| subjects | Cermets Crystals Diodes Electric resistance Electrical properties Electrical resistivity Electron traps Fermi level High temperature Physical properties Semiconductor doping Substrates Thermal instability Zinc oxide Zinc oxides |
| title | Electrical properties of undoped bulk ZnO substrates |
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