Using a First Principles Coulomb Scattering Mobility Model for 4H-SiC MOSFET Device Simulation

A physics based device simulator for detailed numerical analysis of 4H-SiC MOSFETs with an advanced mobility model that accounts for the effects of bulk and surface phonons, surface roughness and Coulomb scattering by occupied interface traps and fixed oxide charges, has been developed. A first prin...

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Veröffentlicht in:	Materials science forum 2006-10, Vol.527-529, p.1321-1324
Hauptverfasser:	Potbhare, Siddharth, Habersat, Daniel B., McGarrity, J.M., Lelis, Aivars J., Pennington, Gary, McLean, F. Barry, Goldsman, Neil
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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