Effects of hydrogen on majority carrier transport and minority carrier lifetimes in long-wavelength infrared HgCdTe on Si

We present extended results on the use of a hydrogen plasma to passivate the effects of defects in long-wave ir HgCdTe/Si. Annealed and as-grown epilayers, in situ doped with indium, were exposed to a hydrogen plasma generated in an electron cyclotron resonance (ECR) reactor. Secondary ion mass spec...

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Veröffentlicht in:	Journal of electronic materials 2006-06, Vol.35 (6), p.1385-1390
Hauptverfasser:	BOIERIU, P, GREIN, C. H, GARLAND, J, VELICU, S, FULK, C, STOLTZ, A, BUBULAC, L, DINAN, J. H, SIVANANTHAN, S
Format:	Artikel
Sprache:	eng
Schlagworte:	Cross-disciplinary physics: materials science rheology Defects Exact sciences and technology Hydrogen Hydrogenation Infrared radiation Mass spectrometry Materials science Mercury cadmium telluride Molecular beam epitaxy Passivation Physics Plasma Silicon Studies Surface treatments Temperature Threading dislocations
Online-Zugang:	Volltext
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