Fowler-Nordheim current modeling of metal/ultra-thin oxide/semiconductor structures in the inversion mode, defects characterization

In this paper, we present a simple model of Fowler-Nordheim (FN) current of metal/ultra-thin oxide/semiconductor (MOS) structures biased in the inversion mode ($V_{g }> 0$) (injection of electrons from the semiconductor). The oxide thickness varies from 45 Å to 110 Å, the gate is in chrome and th...

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Veröffentlicht in:	European physical journal. Applied physics 2004-10, Vol.28 (1), p.27-41
Hauptverfasser:	Khlifi, Y., Kassmi, K., Aziz, A., Olivie, F.
Format:	Artikel
Sprache:	eng
Schlagworte:	73.40.Gk 73.40.Qv Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Exact sciences and technology Metal-insulator-semiconductor structures (including semiconductor-to-insulator) Physics
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