CHARACTERISTICS OF POLYSILICON TFTs, HYDROGENATED BY ION IMPLANTATION P-CHANNEL

Self-aligned polycrystalline silicon thin film transistors (PS TFTs) with different phosphorus channel doping have been investigated by the conduction method. The polysilicon gate was heavily doped by ion implantation of phosphorus. The source and drain electrodes were heavily doped by ion implantat...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of Optoelectronics and Advanced Materials 2005-02, Vol.7 (1), p.313-316
Hauptverfasser:	Aleksandrova, P, Gueorguiev, V, Ivanov, Tz, Popova, L
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!