Characterization of growth defects in thin GaN layers with X-ray microbeam
The spatially resolved distribution of strain, misfit and threading dislocations, and crystallographic orientation in uncoalesced GaN layers grown on Si(111) by maskless cantilever epitaxy or by pendeo epitaxy on SiC was studied by white beam Laue X‐ray microdiffraction, scanning electron and orient...
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| Veröffentlicht in: | Physica Status Solidi (b) 2007-05, Vol.244 (5), p.1735-1742 |
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| creator | Barabash, R. I. Ice, G. E. Roder, C. Budai, J. Liu, W. Figge, S. Einfeldt, S. Hommel, D. Davis, R. F. |
| description | The spatially resolved distribution of strain, misfit and threading dislocations, and crystallographic orientation in uncoalesced GaN layers grown on Si(111) by maskless cantilever epitaxy or by pendeo epitaxy on SiC was studied by white beam Laue X‐ray microdiffraction, scanning electron and orientation imaging microscopy. Tilt boundaries formed at the column/wing interface depending on the growth conditions. A depth dependent deviatoric strain gradient is found in the GaN. The density of misfit dislocations as well as their arrangement within different dislocation arrays was quantified. Two different kinds of tilt (parallel and perpendicular to the stripe direction) manifested themselves by mutually orthogonal displacements of the (0006) GaN Laue spot relative to the Si(444) Laue spot. The origin of the tilts is discussed with respect to the miscut of the Si(111) surface and misfit dislocations formed at the interface. Regular oscillations of the conventional wing tilt were observed. Irregular crystallographic tilts fluctuations were found in the direction parallel to stripes. The amplitude of fluctuations is an order of magnitude smaller for layers with a lower defects density. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
| doi_str_mv | 10.1002/pssb.200675113 |
| format | Article |
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I. ; Ice, G. E. ; Roder, C. ; Budai, J. ; Liu, W. ; Figge, S. ; Einfeldt, S. ; Hommel, D. ; Davis, R. F.</creator><creatorcontrib>Barabash, R. I. ; Ice, G. E. ; Roder, C. ; Budai, J. ; Liu, W. ; Figge, S. ; Einfeldt, S. ; Hommel, D. ; Davis, R. F. ; Argonne National Lab. (ANL), Argonne, IL (United States)</creatorcontrib><description>The spatially resolved distribution of strain, misfit and threading dislocations, and crystallographic orientation in uncoalesced GaN layers grown on Si(111) by maskless cantilever epitaxy or by pendeo epitaxy on SiC was studied by white beam Laue X‐ray microdiffraction, scanning electron and orientation imaging microscopy. Tilt boundaries formed at the column/wing interface depending on the growth conditions. A depth dependent deviatoric strain gradient is found in the GaN. The density of misfit dislocations as well as their arrangement within different dislocation arrays was quantified. Two different kinds of tilt (parallel and perpendicular to the stripe direction) manifested themselves by mutually orthogonal displacements of the (0006) GaN Laue spot relative to the Si(444) Laue spot. The origin of the tilts is discussed with respect to the miscut of the Si(111) surface and misfit dislocations formed at the interface. Regular oscillations of the conventional wing tilt were observed. Irregular crystallographic tilts fluctuations were found in the direction parallel to stripes. The amplitude of fluctuations is an order of magnitude smaller for layers with a lower defects density. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</description><identifier>ISSN: 0370-1972</identifier><identifier>EISSN: 1521-3951</identifier><identifier>DOI: 10.1002/pssb.200675113</identifier><identifier>CODEN: PSSBBD</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>42.62.−b ; 61.10.−i ; 61.72.Dd ; 61.72.Ff ; 68.55.Ln ; Condensed matter: structure, mechanical and thermal properties ; DISLOCATIONS ; DISTRIBUTION ; EPITAXY ; Exact sciences and technology ; GALLIUM NITRIDES ; MATERIALS SCIENCE ; MICROANALYSIS ; ORIENTATION ; Physics ; SILICON CARBIDES ; STRAINS ; Structure and morphology; thickness ; SUBSTRATES ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology ; X-RAY DIFFRACTION</subject><ispartof>Physica Status Solidi (b), 2007-05, Vol.244 (5), p.1735-1742</ispartof><rights>Copyright © 2007 WILEY‐VCH Verlag GmbH & Co. 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Tilt boundaries formed at the column/wing interface depending on the growth conditions. A depth dependent deviatoric strain gradient is found in the GaN. The density of misfit dislocations as well as their arrangement within different dislocation arrays was quantified. Two different kinds of tilt (parallel and perpendicular to the stripe direction) manifested themselves by mutually orthogonal displacements of the (0006) GaN Laue spot relative to the Si(444) Laue spot. The origin of the tilts is discussed with respect to the miscut of the Si(111) surface and misfit dislocations formed at the interface. Regular oscillations of the conventional wing tilt were observed. Irregular crystallographic tilts fluctuations were found in the direction parallel to stripes. The amplitude of fluctuations is an order of magnitude smaller for layers with a lower defects density. (© 2007 WILEY‐VCH Verlag GmbH & Co. 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Tilt boundaries formed at the column/wing interface depending on the growth conditions. A depth dependent deviatoric strain gradient is found in the GaN. The density of misfit dislocations as well as their arrangement within different dislocation arrays was quantified. Two different kinds of tilt (parallel and perpendicular to the stripe direction) manifested themselves by mutually orthogonal displacements of the (0006) GaN Laue spot relative to the Si(444) Laue spot. The origin of the tilts is discussed with respect to the miscut of the Si(111) surface and misfit dislocations formed at the interface. Regular oscillations of the conventional wing tilt were observed. Irregular crystallographic tilts fluctuations were found in the direction parallel to stripes. The amplitude of fluctuations is an order of magnitude smaller for layers with a lower defects density. (© 2007 WILEY‐VCH Verlag GmbH & Co. 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| subjects | 42.62.−b 61.10.−i 61.72.Dd 61.72.Ff 68.55.Ln Condensed matter: structure, mechanical and thermal properties DISLOCATIONS DISTRIBUTION EPITAXY Exact sciences and technology GALLIUM NITRIDES MATERIALS SCIENCE MICROANALYSIS ORIENTATION Physics SILICON CARBIDES STRAINS Structure and morphology thickness SUBSTRATES Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology X-RAY DIFFRACTION |
| title | Characterization of growth defects in thin GaN layers with X-ray microbeam |
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