AlGaN ultraviolet metal-semiconductor-metal photodetectors grown on Si substrates

AlGaN ultraviolet metal-semiconductor-metal photodetectors (PDs) with low temperature (LT)-AlN and LT-GaN cap layers were prepared on Si substrates. Unlike PDs prepared on sapphire substrates, no markedly reduction in dark current was observed from the PD with LT-GaN cap layer. With an incident wave...

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Veröffentlicht in:	Sensors and actuators. A. Physical. 2007-04, Vol.135 (2), p.502-506
Hauptverfasser:	Chang, S.J., Ko, T.K., Sheu, J.K., Shei, S.C., Lai, W.C., Chiou, Y.Z., Lin, Y.C., Chang, C.S., Chen, W.S., Shen, C.F.
Format:	Artikel
Sprache:	eng
Schlagworte:	AlGaN MSM Photodetectors Si substrates
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