Compositional Study of Copper-Germanium Ohmic Contact to n-GaN

Compositional Study of Copper-Germanium Ohmic Contact to n-GaN

400°C alloying of Ge/Cu/Ge films on modestly doped n-GaN results in linear current-voltage (I-V) behavior over a wide range of relative Ge compositions. X-ray diffraction (XRD) and Auger depth profiling data suggest that the lowest contact resistivity is due to film compositions near 25 at.% Ge, whe...

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Veröffentlicht in:Journal of electronic materials 2007-04, Vol.36 (4), p.420-425
Hauptverfasser: Schuette, Michael L., Lu, Wu
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Copper
Diffraction
Electronics
Studies
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description 400°C alloying of Ge/Cu/Ge films on modestly doped n-GaN results in linear current-voltage (I-V) behavior over a wide range of relative Ge compositions. X-ray diffraction (XRD) and Auger depth profiling data suggest that the lowest contact resistivity is due to film compositions near 25 at.% Ge, where the amount of interfacial nonreacted Ge is low. Ohmic contact is likely established by a heavily doped GaN interfacial region influenced by premetallization reactive ion etching (RIE) and later low-temperature alloying, which assists in the formation of donorlike complexes possibly involving Ge^sub Ga^ or Si^sub Ga^. This contact shows exceptionally smooth surface morphology, as revealed by atomic force microscopy (AFM). [PUBLICATION ABSTRACT]
doi_str_mv 10.1007/s11664-006-0073-5
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subjects Copper
Diffraction
Electronics
Studies
title Compositional Study of Copper-Germanium Ohmic Contact to n-GaN
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