Characterization of SOI wafers by synchrotron X-ray topography

Synchrotron X-ray topographs were taken for bonded silicon-on-insulator wafers. Under the grazing incident condition, the topographs of the top Si layer and the substrate are similar, which represent the variation in incident angle due to surface undulation. Furthermore, a circular concentric patter...

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Veröffentlicht in:	EPJ. Applied physics (Print) 2004-07, Vol.27 (1-3), p.439-442
Hauptverfasser:	Shimura, T., Fukuda, K., Yasutake, K., Umeno, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	61.10.-i 68.55.-a Condensed matter: structure, mechanical and thermal properties Electron, ion, and scanning probe microscopy Exact sciences and technology Physics Structure and morphology thickness Structure of solids and liquids crystallography Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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