Green light emitting diodes with CdSe quantum dots

Green light emitting diodes were fabricated by molecular beam epitaxy using CdSe quantum dots (QDs) as emission layers. The diode structure was “Au electrode/p-ZnTe/pseudo-graded bandgap structure of ZnSeTe/p-ZnSe:N/undoped ZnSe/emission layer/undoped ZnSe/n-ZnSe:Cl/n-GaAs(0 0 1) substrate/In electr...

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Bibliographische Detailangaben
Veröffentlicht in:	Journal of crystal growth 2007-04, Vol.301, p.809-811
Hauptverfasser:	Araki, Yuji, Ohkuno, Koji, Furukawa, Takeshi, Saraie, Junji
Format:	Artikel
Sprache:	eng
Schlagworte:	A3. CdSe quantum dots A3. Structure of emission layer Applied sciences B2. Ohmic contact B2. ZnSe intermediate layer B3. Green LED Cross-disciplinary physics: materials science rheology Electronics Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Nanoscale materials and structures: fabrication and characterization Optoelectronic devices Other topics in nanoscale materials and structures Physics Quantum dots Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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