Growth of (In,Ga)As/(Al,Ga)As quantum wells on GaAs(1 1 0) by MBE
The structural and optical properties of (In,Ga)As/(Al,Ga)As quantum wells grown on GaAs(1 1 0) by conventional molecular beam epitaxy as well as by migration-enhanced epitaxy are studied by low-temperature photoluminescence (PL), cathodoluminescence (CL), atomic force microscopy (AFM) and transmiss...
Gespeichert in:
| Veröffentlicht in: | Journal of crystal growth 2007-04, Vol.301, p.158-162 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 162 |
|---|---|
| container_issue | |
| container_start_page | 158 |
| container_title | Journal of crystal growth |
| container_volume | 301 |
| creator | Hey, R. Trampert, A. Jahn, U. Couto, O.D.D. Santos, P. |
| description | The structural and optical properties of (In,Ga)As/(Al,Ga)As quantum wells grown on GaAs(1
1
0) by conventional molecular beam epitaxy as well as by migration-enhanced epitaxy are studied by low-temperature photoluminescence (PL), cathodoluminescence (CL), atomic force microscopy (AFM) and transmission electron microscopy (TEM). The quality of GaAs/(Al,Ga)As quantum wells (QWs) allows to detect spin transport mediated by surface acoustic waves over distances up to 65
μm with spin lifetimes of about 22
ns. For (In,Ga)As/GaAs QWs, the accumulated strain due to the increase of the In mole fractions or the well thicknesses degrades the structural perfection more dramatically in structures with (1
1
0)-orientation than in structures with (0
0
1)-orientation. The quality of (In,Ga)As wells is remarkably improved by migration-enhanced epitaxy. |
| doi_str_mv | 10.1016/j.jcrysgro.2006.11.291 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_29819442</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0022024806014631</els_id><sourcerecordid>29819442</sourcerecordid><originalsourceid>FETCH-LOGICAL-c373t-a3b139c9266839d7a89fb357811e161166ca9b5e4c538a808600afd193eb24073</originalsourceid><addsrcrecordid>eNqFkEFPAjEQhRujiYj-BdOLBhJ36bRLt725EkQSjBc9N93S1SXLLrS7Ev69JWA8epmZw_tm3jyEboHEQICPVvHKuL3_dE1MCeExQEwlnKEeiJRFY0LoOeqFSiNCE3GJrrxfERJIID2UzVyza79wU-DBvH6Y6WHmR4OsOk542-m67dZ4Z6vK46bGM535AWDAZIjzPX59ml6ji0JX3t6ceh99PE_fJy_R4m02n2SLyLCUtZFmOTBpJOVcMLlMtZBFzsapALDBCnButMzHNjFjJrQgghOiiyVIZnOakJT10f1x78Y12876Vq1Lb4IvXdum84pKATJJaBDyo9C4xntnC7Vx5Vq7vQKiDomplfpNTB0SUwCBhgDenS5ob3RVOF2b0v_RgnMOUgbd41Fnw7vfpXXKm9LWxi5LZ02rlk3536kf0h1_uQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>29819442</pqid></control><display><type>article</type><title>Growth of (In,Ga)As/(Al,Ga)As quantum wells on GaAs(1 1 0) by MBE</title><source>Elsevier ScienceDirect Journals Complete</source><creator>Hey, R. ; Trampert, A. ; Jahn, U. ; Couto, O.D.D. ; Santos, P.</creator><creatorcontrib>Hey, R. ; Trampert, A. ; Jahn, U. ; Couto, O.D.D. ; Santos, P.</creatorcontrib><description>The structural and optical properties of (In,Ga)As/(Al,Ga)As quantum wells grown on GaAs(1
1
0) by conventional molecular beam epitaxy as well as by migration-enhanced epitaxy are studied by low-temperature photoluminescence (PL), cathodoluminescence (CL), atomic force microscopy (AFM) and transmission electron microscopy (TEM). The quality of GaAs/(Al,Ga)As quantum wells (QWs) allows to detect spin transport mediated by surface acoustic waves over distances up to 65
μm with spin lifetimes of about 22
ns. For (In,Ga)As/GaAs QWs, the accumulated strain due to the increase of the In mole fractions or the well thicknesses degrades the structural perfection more dramatically in structures with (1
1
0)-orientation than in structures with (0
0
1)-orientation. The quality of (In,Ga)As wells is remarkably improved by migration-enhanced epitaxy.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2006.11.291</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Low-dimensional structures ; A3. Molecular beam epitaxy ; B2. Semiconducting III–V materials ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Growth from vapor ; Materials science ; Methods of crystal growth; physics of crystal growth ; Methods of deposition of films and coatings; film growth and epitaxy ; Molecular, atomic, ion, and chemical beam epitaxy ; Nanoscale materials and structures: fabrication and characterization ; Other topics in nanoscale materials and structures ; Physics ; Theory and models of film growth</subject><ispartof>Journal of crystal growth, 2007-04, Vol.301, p.158-162</ispartof><rights>2007 Elsevier B.V.</rights><rights>2007 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c373t-a3b139c9266839d7a89fb357811e161166ca9b5e4c538a808600afd193eb24073</citedby><cites>FETCH-LOGICAL-c373t-a3b139c9266839d7a89fb357811e161166ca9b5e4c538a808600afd193eb24073</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jcrysgro.2006.11.291$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,3550,23930,23931,25140,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=18666199$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Hey, R.</creatorcontrib><creatorcontrib>Trampert, A.</creatorcontrib><creatorcontrib>Jahn, U.</creatorcontrib><creatorcontrib>Couto, O.D.D.</creatorcontrib><creatorcontrib>Santos, P.</creatorcontrib><title>Growth of (In,Ga)As/(Al,Ga)As quantum wells on GaAs(1 1 0) by MBE</title><title>Journal of crystal growth</title><description>The structural and optical properties of (In,Ga)As/(Al,Ga)As quantum wells grown on GaAs(1
1
0) by conventional molecular beam epitaxy as well as by migration-enhanced epitaxy are studied by low-temperature photoluminescence (PL), cathodoluminescence (CL), atomic force microscopy (AFM) and transmission electron microscopy (TEM). The quality of GaAs/(Al,Ga)As quantum wells (QWs) allows to detect spin transport mediated by surface acoustic waves over distances up to 65
μm with spin lifetimes of about 22
ns. For (In,Ga)As/GaAs QWs, the accumulated strain due to the increase of the In mole fractions or the well thicknesses degrades the structural perfection more dramatically in structures with (1
1
0)-orientation than in structures with (0
0
1)-orientation. The quality of (In,Ga)As wells is remarkably improved by migration-enhanced epitaxy.</description><subject>A1. Low-dimensional structures</subject><subject>A3. Molecular beam epitaxy</subject><subject>B2. Semiconducting III–V materials</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Growth from vapor</subject><subject>Materials science</subject><subject>Methods of crystal growth; physics of crystal growth</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Molecular, atomic, ion, and chemical beam epitaxy</subject><subject>Nanoscale materials and structures: fabrication and characterization</subject><subject>Other topics in nanoscale materials and structures</subject><subject>Physics</subject><subject>Theory and models of film growth</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNqFkEFPAjEQhRujiYj-BdOLBhJ36bRLt725EkQSjBc9N93S1SXLLrS7Ev69JWA8epmZw_tm3jyEboHEQICPVvHKuL3_dE1MCeExQEwlnKEeiJRFY0LoOeqFSiNCE3GJrrxfERJIID2UzVyza79wU-DBvH6Y6WHmR4OsOk542-m67dZ4Z6vK46bGM535AWDAZIjzPX59ml6ji0JX3t6ceh99PE_fJy_R4m02n2SLyLCUtZFmOTBpJOVcMLlMtZBFzsapALDBCnButMzHNjFjJrQgghOiiyVIZnOakJT10f1x78Y12876Vq1Lb4IvXdum84pKATJJaBDyo9C4xntnC7Vx5Vq7vQKiDomplfpNTB0SUwCBhgDenS5ob3RVOF2b0v_RgnMOUgbd41Fnw7vfpXXKm9LWxi5LZ02rlk3536kf0h1_uQ</recordid><startdate>20070401</startdate><enddate>20070401</enddate><creator>Hey, R.</creator><creator>Trampert, A.</creator><creator>Jahn, U.</creator><creator>Couto, O.D.D.</creator><creator>Santos, P.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20070401</creationdate><title>Growth of (In,Ga)As/(Al,Ga)As quantum wells on GaAs(1 1 0) by MBE</title><author>Hey, R. ; Trampert, A. ; Jahn, U. ; Couto, O.D.D. ; Santos, P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c373t-a3b139c9266839d7a89fb357811e161166ca9b5e4c538a808600afd193eb24073</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>A1. Low-dimensional structures</topic><topic>A3. Molecular beam epitaxy</topic><topic>B2. Semiconducting III–V materials</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Growth from vapor</topic><topic>Materials science</topic><topic>Methods of crystal growth; physics of crystal growth</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Molecular, atomic, ion, and chemical beam epitaxy</topic><topic>Nanoscale materials and structures: fabrication and characterization</topic><topic>Other topics in nanoscale materials and structures</topic><topic>Physics</topic><topic>Theory and models of film growth</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hey, R.</creatorcontrib><creatorcontrib>Trampert, A.</creatorcontrib><creatorcontrib>Jahn, U.</creatorcontrib><creatorcontrib>Couto, O.D.D.</creatorcontrib><creatorcontrib>Santos, P.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hey, R.</au><au>Trampert, A.</au><au>Jahn, U.</au><au>Couto, O.D.D.</au><au>Santos, P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth of (In,Ga)As/(Al,Ga)As quantum wells on GaAs(1 1 0) by MBE</atitle><jtitle>Journal of crystal growth</jtitle><date>2007-04-01</date><risdate>2007</risdate><volume>301</volume><spage>158</spage><epage>162</epage><pages>158-162</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>The structural and optical properties of (In,Ga)As/(Al,Ga)As quantum wells grown on GaAs(1
1
0) by conventional molecular beam epitaxy as well as by migration-enhanced epitaxy are studied by low-temperature photoluminescence (PL), cathodoluminescence (CL), atomic force microscopy (AFM) and transmission electron microscopy (TEM). The quality of GaAs/(Al,Ga)As quantum wells (QWs) allows to detect spin transport mediated by surface acoustic waves over distances up to 65
μm with spin lifetimes of about 22
ns. For (In,Ga)As/GaAs QWs, the accumulated strain due to the increase of the In mole fractions or the well thicknesses degrades the structural perfection more dramatically in structures with (1
1
0)-orientation than in structures with (0
0
1)-orientation. The quality of (In,Ga)As wells is remarkably improved by migration-enhanced epitaxy.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2006.11.291</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0022-0248 |
| ispartof | Journal of crystal growth, 2007-04, Vol.301, p.158-162 |
| issn | 0022-0248 1873-5002 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_29819442 |
| source | Elsevier ScienceDirect Journals Complete |
| subjects | A1. Low-dimensional structures A3. Molecular beam epitaxy B2. Semiconducting III–V materials Cross-disciplinary physics: materials science rheology Exact sciences and technology Growth from vapor Materials science Methods of crystal growth physics of crystal growth Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Nanoscale materials and structures: fabrication and characterization Other topics in nanoscale materials and structures Physics Theory and models of film growth |
| title | Growth of (In,Ga)As/(Al,Ga)As quantum wells on GaAs(1 1 0) by MBE |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T04%3A34%3A46IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Growth%20of%20(In,Ga)As/(Al,Ga)As%20quantum%20wells%20on%20GaAs(1%201%200)%20by%20MBE&rft.jtitle=Journal%20of%20crystal%20growth&rft.au=Hey,%20R.&rft.date=2007-04-01&rft.volume=301&rft.spage=158&rft.epage=162&rft.pages=158-162&rft.issn=0022-0248&rft.eissn=1873-5002&rft.coden=JCRGAE&rft_id=info:doi/10.1016/j.jcrysgro.2006.11.291&rft_dat=%3Cproquest_cross%3E29819442%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=29819442&rft_id=info:pmid/&rft_els_id=S0022024806014631&rfr_iscdi=true |