AVD and ALD as Two Complementary Technology Solutions for Next Generation Dielectric and Conductive Thin-Film Processing

Further scaling of functional layers for 45 nm technology nodes and below will reach the physical limits of conventional materials. It is expected that, for CMOS devices, silicon oxide and poly‐silicon will need to be replaced with alternative high‐k dielectrics, and electrode materials. Additionally for DRAM it appears that 100 % step coverage of deep‐trench structures with aspect ratios approaching 100:1 is going to be necessary. Advanced processing technologies will be needed to overcome the challenges to produce high quality films with high throughput. In this review article, two complementary advanced deposition technologies are described: Atomic vapor deposition (AVD), as a special metal‐organic (MO)CVD process mode, and atomic layer deposition (ALD). The operational principles and deposition results are described for a wide range of dielectric and conductive materials. Two complementary advanced deposition technologies for next generation semiconductor devices are described: Atomic vapor deposition (AVD), a special MOCVD process mode, and atomic layer deposition (ALD). The operational principles and deposition results are described for a wide range of dielectric and conductive materials. Issues such as gas‐phase saturation of precursors, stoichiometric control combined with deposition rate of films, and step coverage of trenches are considered.