Triode with Heterostructure Filament
A novel solid-state based triode, replicating vacuum tubes, was modeled, designed, fabricated and tested. The anode was made of a heterostructure junction, similar to the structure of HEMTs. Using planar technology, the gate (grid) was positioned between the anode and one of the ohmic contacts in th...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1510 |
|---|---|
| container_issue | |
| container_start_page | 1509 |
| container_title | |
| container_volume | 772 |
| creator | Gil, C Mil'shtein, S |
| description | A novel solid-state based triode, replicating vacuum tubes, was modeled, designed, fabricated and tested. The anode was made of a heterostructure junction, similar to the structure of HEMTs. Using planar technology, the gate (grid) was positioned between the anode and one of the ohmic contacts in the same layer as the anode. The filament made of 120A thick InGaAs layer carries current in the range of 100-200mA/mm. The electron flow along the filament is deflected towards the anode by its positive potential. Variation of the potential at the gate (grid) allows control of the current through the filament. The I-V characteristics of the new device resemble that of a vacuum triode. |
| doi_str_mv | 10.1063/1.1994688 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_29792038</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>29792038</sourcerecordid><originalsourceid>FETCH-LOGICAL-p186t-2eb1f0f5e0b307ad7d3d7ee484bc2e766caaaeda0444fc6b1e04a016e8f0c1e83</originalsourceid><addsrcrecordid>eNotzstKAzEUgOFAFXrRRd9gFuJu6klyJpelFGuFgpsK7komOcEp005NMvj6Cnb17z5-xpYcVhyUfOIrbi0qYyZsDlo2CKLReMNmABZrgfJzyuY5HwGE1drM2MM-dUOg6qcrX9WWCqUhlzT6MiaqNl3vTnQud-w2uj7T_bUL9rF52a-39e799W39vKsv3KhSC2p5hNgQtBK0CzrIoInQYOsFaaW8c46CA0SMXrWcAB1wRSaC52Tkgj3-u5c0fI-Uy-HUZU997840jPnw92wFSCN_ARfCQtQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype><pqid>29792038</pqid></control><display><type>conference_proceeding</type><title>Triode with Heterostructure Filament</title><source>AIP Journals Complete</source><creator>Gil, C ; Mil'shtein, S</creator><creatorcontrib>Gil, C ; Mil'shtein, S</creatorcontrib><description>A novel solid-state based triode, replicating vacuum tubes, was modeled, designed, fabricated and tested. The anode was made of a heterostructure junction, similar to the structure of HEMTs. Using planar technology, the gate (grid) was positioned between the anode and one of the ohmic contacts in the same layer as the anode. The filament made of 120A thick InGaAs layer carries current in the range of 100-200mA/mm. The electron flow along the filament is deflected towards the anode by its positive potential. Variation of the potential at the gate (grid) allows control of the current through the filament. The I-V characteristics of the new device resemble that of a vacuum triode.</description><identifier>ISSN: 0094-243X</identifier><identifier>ISBN: 0735402574</identifier><identifier>ISBN: 9780735402577</identifier><identifier>DOI: 10.1063/1.1994688</identifier><language>eng</language><ispartof>Physics of Semiconductors; Part B, 2005, Vol.772, p.1509-1510</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Gil, C</creatorcontrib><creatorcontrib>Mil'shtein, S</creatorcontrib><title>Triode with Heterostructure Filament</title><title>Physics of Semiconductors; Part B</title><description>A novel solid-state based triode, replicating vacuum tubes, was modeled, designed, fabricated and tested. The anode was made of a heterostructure junction, similar to the structure of HEMTs. Using planar technology, the gate (grid) was positioned between the anode and one of the ohmic contacts in the same layer as the anode. The filament made of 120A thick InGaAs layer carries current in the range of 100-200mA/mm. The electron flow along the filament is deflected towards the anode by its positive potential. Variation of the potential at the gate (grid) allows control of the current through the filament. The I-V characteristics of the new device resemble that of a vacuum triode.</description><issn>0094-243X</issn><isbn>0735402574</isbn><isbn>9780735402577</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2005</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNotzstKAzEUgOFAFXrRRd9gFuJu6klyJpelFGuFgpsK7komOcEp005NMvj6Cnb17z5-xpYcVhyUfOIrbi0qYyZsDlo2CKLReMNmABZrgfJzyuY5HwGE1drM2MM-dUOg6qcrX9WWCqUhlzT6MiaqNl3vTnQud-w2uj7T_bUL9rF52a-39e799W39vKsv3KhSC2p5hNgQtBK0CzrIoInQYOsFaaW8c46CA0SMXrWcAB1wRSaC52Tkgj3-u5c0fI-Uy-HUZU997840jPnw92wFSCN_ARfCQtQ</recordid><startdate>20050101</startdate><enddate>20050101</enddate><creator>Gil, C</creator><creator>Mil'shtein, S</creator><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20050101</creationdate><title>Triode with Heterostructure Filament</title><author>Gil, C ; Mil'shtein, S</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p186t-2eb1f0f5e0b307ad7d3d7ee484bc2e766caaaeda0444fc6b1e04a016e8f0c1e83</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2005</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gil, C</creatorcontrib><creatorcontrib>Mil'shtein, S</creatorcontrib><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gil, C</au><au>Mil'shtein, S</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Triode with Heterostructure Filament</atitle><btitle>Physics of Semiconductors; Part B</btitle><date>2005-01-01</date><risdate>2005</risdate><volume>772</volume><spage>1509</spage><epage>1510</epage><pages>1509-1510</pages><issn>0094-243X</issn><isbn>0735402574</isbn><isbn>9780735402577</isbn><abstract>A novel solid-state based triode, replicating vacuum tubes, was modeled, designed, fabricated and tested. The anode was made of a heterostructure junction, similar to the structure of HEMTs. Using planar technology, the gate (grid) was positioned between the anode and one of the ohmic contacts in the same layer as the anode. The filament made of 120A thick InGaAs layer carries current in the range of 100-200mA/mm. The electron flow along the filament is deflected towards the anode by its positive potential. Variation of the potential at the gate (grid) allows control of the current through the filament. The I-V characteristics of the new device resemble that of a vacuum triode.</abstract><doi>10.1063/1.1994688</doi><tpages>2</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0094-243X |
| ispartof | Physics of Semiconductors; Part B, 2005, Vol.772, p.1509-1510 |
| issn | 0094-243X |
| language | eng |
| recordid | cdi_proquest_miscellaneous_29792038 |
| source | AIP Journals Complete |
| title | Triode with Heterostructure Filament |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-21T15%3A10%3A42IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Triode%20with%20Heterostructure%20Filament&rft.btitle=Physics%20of%20Semiconductors;%20Part%20B&rft.au=Gil,%20C&rft.date=2005-01-01&rft.volume=772&rft.spage=1509&rft.epage=1510&rft.pages=1509-1510&rft.issn=0094-243X&rft.isbn=0735402574&rft.isbn_list=9780735402577&rft_id=info:doi/10.1063/1.1994688&rft_dat=%3Cproquest%3E29792038%3C/proquest%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=29792038&rft_id=info:pmid/&rfr_iscdi=true |