Oxygen-pressure dependence of the crystallinity of MgO films grown on Si(100) by PLD

Effects of the oxygen partial pressure on pulsed-laser deposition of MgO buffer layers on silicon substrates were investigated. The overall growth process was monitored in situ by reflection high-energy electron diffraction (RHEED) method. It was found that the crystallinity and surface morphology o...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of crystal growth 2004-10, Vol.270 (3-4), p.553-559
Hauptverfasser: Chen, Tonglai, Min Li, Xiao, Zhang, Sam, Rong Zeng, Hua
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!