Oxygen-pressure dependence of the crystallinity of MgO films grown on Si(100) by PLD
Effects of the oxygen partial pressure on pulsed-laser deposition of MgO buffer layers on silicon substrates were investigated. The overall growth process was monitored in situ by reflection high-energy electron diffraction (RHEED) method. It was found that the crystallinity and surface morphology o...
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Veröffentlicht in: | Journal of crystal growth 2004-10, Vol.270 (3-4), p.553-559 |
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Sprache: | eng |
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