Optimization of methane cold wall chemical vapor deposition for the production of single walled carbon nanotubes and devices
Carbon nanotubes are synthesized by cold wall chemical vapor deposition (CVD) using methane as the carbon source and iron thin film catalyst. The yield of thin nanotubes as determined by scanning electron microscopy (SEM) is strongly dependent on the precise CVD process and the preparation of the su...
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Veröffentlicht in: | Carbon (New York) 2006-12, Vol.44 (15), p.3199-3206 |
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creator | Finnie, P. Li-Pook-Than, A. Lefebvre, J. Austing, D.G. |
description | Carbon nanotubes are synthesized by cold wall chemical vapor deposition (CVD) using methane as the carbon source and iron thin film catalyst. The yield of thin nanotubes as determined by scanning electron microscopy (SEM) is strongly dependent on the precise CVD process and the preparation of the substrate. The effects of pressure (5–80
kPa), temperature (700–950
°C), substrate conditioning (air preheat) and metallization (Fe, Al, Mo) on thin nanotube yield are reported. High yields of thin nanotubes are obtained under optimum conditions. These thin nanotubes are candidates to be single walled carbon nanotubes (SWNTs) and Raman spectroscopy, photoluminescence spectroscopy and electrical transport provide evidence that, at least at optimum conditions, many, and perhaps all of the thin nanotubes are single walled. Single nanotube field effect transistors are fabricated and factors affecting device yield are reported. Optimum single nanotube device yield does not necessarily coincide with the optimum nanotube yield. |
doi_str_mv | 10.1016/j.carbon.2006.06.039 |
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kPa), temperature (700–950
°C), substrate conditioning (air preheat) and metallization (Fe, Al, Mo) on thin nanotube yield are reported. High yields of thin nanotubes are obtained under optimum conditions. These thin nanotubes are candidates to be single walled carbon nanotubes (SWNTs) and Raman spectroscopy, photoluminescence spectroscopy and electrical transport provide evidence that, at least at optimum conditions, many, and perhaps all of the thin nanotubes are single walled. Single nanotube field effect transistors are fabricated and factors affecting device yield are reported. Optimum single nanotube device yield does not necessarily coincide with the optimum nanotube yield.</description><identifier>ISSN: 0008-6223</identifier><identifier>EISSN: 1873-3891</identifier><identifier>DOI: 10.1016/j.carbon.2006.06.039</identifier><identifier>CODEN: CRBNAH</identifier><language>eng</language><publisher>Oxford: Elsevier Ltd</publisher><subject>Carbon nanotubes ; Chemical vapor deposition ; Cross-disciplinary physics: materials science; rheology ; Electrical (electronic) properties ; Exact sciences and technology ; Fullerenes and related materials; diamonds, graphite ; Materials science ; Optical properties ; Physics ; Scanning electron microscopy ; Specific materials</subject><ispartof>Carbon (New York), 2006-12, Vol.44 (15), p.3199-3206</ispartof><rights>2006</rights><rights>2006 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c463t-502205c911256b65ba0ddab8bdc73a0e6e7f9bf7f223896fda494088871458ae3</citedby><cites>FETCH-LOGICAL-c463t-502205c911256b65ba0ddab8bdc73a0e6e7f9bf7f223896fda494088871458ae3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0008622306003654$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3536,27903,27904,65309</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=18263370$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Finnie, P.</creatorcontrib><creatorcontrib>Li-Pook-Than, A.</creatorcontrib><creatorcontrib>Lefebvre, J.</creatorcontrib><creatorcontrib>Austing, D.G.</creatorcontrib><title>Optimization of methane cold wall chemical vapor deposition for the production of single walled carbon nanotubes and devices</title><title>Carbon (New York)</title><description>Carbon nanotubes are synthesized by cold wall chemical vapor deposition (CVD) using methane as the carbon source and iron thin film catalyst. The yield of thin nanotubes as determined by scanning electron microscopy (SEM) is strongly dependent on the precise CVD process and the preparation of the substrate. The effects of pressure (5–80
kPa), temperature (700–950
°C), substrate conditioning (air preheat) and metallization (Fe, Al, Mo) on thin nanotube yield are reported. High yields of thin nanotubes are obtained under optimum conditions. These thin nanotubes are candidates to be single walled carbon nanotubes (SWNTs) and Raman spectroscopy, photoluminescence spectroscopy and electrical transport provide evidence that, at least at optimum conditions, many, and perhaps all of the thin nanotubes are single walled. Single nanotube field effect transistors are fabricated and factors affecting device yield are reported. Optimum single nanotube device yield does not necessarily coincide with the optimum nanotube yield.</description><subject>Carbon nanotubes</subject><subject>Chemical vapor deposition</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Electrical (electronic) properties</subject><subject>Exact sciences and technology</subject><subject>Fullerenes and related materials; diamonds, graphite</subject><subject>Materials science</subject><subject>Optical properties</subject><subject>Physics</subject><subject>Scanning electron microscopy</subject><subject>Specific materials</subject><issn>0008-6223</issn><issn>1873-3891</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNqNkUFr3DAQhUVooNsk_6AHXZKbt5Jly9KlUEKSFgK5tGchS6OsFltyJe-GlP74yHFKb6UwIAa-9zRvBqGPlGwpofzTfmt06mPY1oTw7VJMnqANFR2rmJD0HdoQQkTF65q9Rx9y3pe2EbTZoN8P0-xH_0vPPgYcHR5h3ukA2MTB4ic9DNjsYPRGD_iop5iwhSlm_4q70s47wFOK9mD-OGQfHgd41YLF62Q46BDnQw8Z62CLx9EbyOfo1Okhw8Xbe4Z-3N58v_5a3T_cfbv-cl-ZhrO5akldk9ZISuuW97ztNbFW96K3pmOaAIfOyd51rsQTkjurG9kQIURHm1ZoYGfoavUtg_48QJ7V6LOBYShB4yGrWnaiFW3zH2AriOQL2KygSTHnBE5NyY86PStK1HITtVdrcrXcRC3FZJFdvvnrXDbqkg7G579aUXPGOlK4zysHZStHD0ll4yEYsD6BmZWN_t8fvQD6F6Yh</recordid><startdate>20061201</startdate><enddate>20061201</enddate><creator>Finnie, P.</creator><creator>Li-Pook-Than, A.</creator><creator>Lefebvre, J.</creator><creator>Austing, D.G.</creator><general>Elsevier Ltd</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7SR</scope><scope>8FD</scope><scope>JG9</scope><scope>8BQ</scope></search><sort><creationdate>20061201</creationdate><title>Optimization of methane cold wall chemical vapor deposition for the production of single walled carbon nanotubes and devices</title><author>Finnie, P. ; Li-Pook-Than, A. ; Lefebvre, J. ; Austing, D.G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c463t-502205c911256b65ba0ddab8bdc73a0e6e7f9bf7f223896fda494088871458ae3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Carbon nanotubes</topic><topic>Chemical vapor deposition</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Electrical (electronic) properties</topic><topic>Exact sciences and technology</topic><topic>Fullerenes and related materials; diamonds, graphite</topic><topic>Materials science</topic><topic>Optical properties</topic><topic>Physics</topic><topic>Scanning electron microscopy</topic><topic>Specific materials</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Finnie, P.</creatorcontrib><creatorcontrib>Li-Pook-Than, A.</creatorcontrib><creatorcontrib>Lefebvre, J.</creatorcontrib><creatorcontrib>Austing, D.G.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>METADEX</collection><jtitle>Carbon (New York)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Finnie, P.</au><au>Li-Pook-Than, A.</au><au>Lefebvre, J.</au><au>Austing, D.G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Optimization of methane cold wall chemical vapor deposition for the production of single walled carbon nanotubes and devices</atitle><jtitle>Carbon (New York)</jtitle><date>2006-12-01</date><risdate>2006</risdate><volume>44</volume><issue>15</issue><spage>3199</spage><epage>3206</epage><pages>3199-3206</pages><issn>0008-6223</issn><eissn>1873-3891</eissn><coden>CRBNAH</coden><abstract>Carbon nanotubes are synthesized by cold wall chemical vapor deposition (CVD) using methane as the carbon source and iron thin film catalyst. The yield of thin nanotubes as determined by scanning electron microscopy (SEM) is strongly dependent on the precise CVD process and the preparation of the substrate. The effects of pressure (5–80
kPa), temperature (700–950
°C), substrate conditioning (air preheat) and metallization (Fe, Al, Mo) on thin nanotube yield are reported. High yields of thin nanotubes are obtained under optimum conditions. These thin nanotubes are candidates to be single walled carbon nanotubes (SWNTs) and Raman spectroscopy, photoluminescence spectroscopy and electrical transport provide evidence that, at least at optimum conditions, many, and perhaps all of the thin nanotubes are single walled. Single nanotube field effect transistors are fabricated and factors affecting device yield are reported. Optimum single nanotube device yield does not necessarily coincide with the optimum nanotube yield.</abstract><cop>Oxford</cop><pub>Elsevier Ltd</pub><doi>10.1016/j.carbon.2006.06.039</doi><tpages>8</tpages></addata></record> |
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subjects | Carbon nanotubes Chemical vapor deposition Cross-disciplinary physics: materials science rheology Electrical (electronic) properties Exact sciences and technology Fullerenes and related materials diamonds, graphite Materials science Optical properties Physics Scanning electron microscopy Specific materials |
title | Optimization of methane cold wall chemical vapor deposition for the production of single walled carbon nanotubes and devices |
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