Temperature-dependent intermixing of ultrathin Co films grown on Cu(1 0 0)

The growth and chemical composition of Co on Cu(1 0 0) has been studied by He ion scattering and Auger electron spectroscopy (AES) at different temperatures ( T = 130 K, T = 300 K and T = 410 K). Based on different information depths for electron-induced Cu-MNN and Cu-LMM Auger signals and inner she...

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Veröffentlicht in:Surface science 2005-01, Vol.575 (1), p.154-162
Hauptverfasser: Bernhard, T., Pfandzelter, R., Gruyters, M., Winter, H.
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creator Bernhard, T.
Pfandzelter, R.
Gruyters, M.
Winter, H.
description The growth and chemical composition of Co on Cu(1 0 0) has been studied by He ion scattering and Auger electron spectroscopy (AES) at different temperatures ( T = 130 K, T = 300 K and T = 410 K). Based on different information depths for electron-induced Cu-MNN and Cu-LMM Auger signals and inner shell production by grazingly scattered protons restricted to the topmost layer, we have modeled the Auger data in order to obtain quantitative information on the chemical composition of ultrathin intermixed Co–Cu films. We find that intermixing and Cu diffusion is not only important for film growth at elevated temperatures, but also for heterogeneous Co/Cu epitaxy at room temperature.
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subjects Auger electron spectroscopy
Cobalt
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Copper
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Ion–solid interactions
Metal–metal interfaces
Molecular beam epitaxy
Physics
Surface segregation
title Temperature-dependent intermixing of ultrathin Co films grown on Cu(1 0 0)
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