A comparative study of metamorphic InP/InGaAs double heterojunction bipolar transistors with InP and InAIP buffer layers grown by molecular beam epitaxy

A comparative study of metamorphic InP/InGaAs double heterojunction bipolar transistors with InP and InAIP buffer layers grown by molecular beam epitaxy

We present a comparison of material quality and device performance of metamorphic InGaAs/InP heterojunction bipolar transistors (HBTs) grown by molecular beam epitaxy (MBE) on GaAs substrates with two different types of buffer layers (direct InP and graded InAlP buffers). The results show that the a...

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Veröffentlicht in:Journal of electronic materials 2006-02, Vol.35 (2), p.266-272
Hauptverfasser: Sin, Yongkun, Presser, Nathan, Adams, Paul
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Materials science
Molecular beam epitaxy
Transistors
Transmission electron microscopy
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Presser, Nathan
Adams, Paul
description We present a comparison of material quality and device performance of metamorphic InGaAs/InP heterojunction bipolar transistors (HBTs) grown by molecular beam epitaxy (MBE) on GaAs substrates with two different types of buffer layers (direct InP and graded InAlP buffers). The results show that the active layer of InP-MHBT has more than one order of magnitude more defects than that of the InAlP-MHBT. The InAlP-MHBTs show excellent direct current (DC) performance. Low DC current gain and a high base junction ideality factor from the InP-MHBT are possibly due to a large number of electrically active dislocations in the HBT active layers, which is consistent with a large number of defects observed by cross-sectional transmission electron microscopy (TEM) and rough surface morphology observed by atomic force microscopy (AFM). [PUBLICATION ABSTRACT]
doi_str_mv 10.1007/BF02692445
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The results show that the active layer of InP-MHBT has more than one order of magnitude more defects than that of the InAlP-MHBT. The InAlP-MHBTs show excellent direct current (DC) performance. Low DC current gain and a high base junction ideality factor from the InP-MHBT are possibly due to a large number of electrically active dislocations in the HBT active layers, which is consistent with a large number of defects observed by cross-sectional transmission electron microscopy (TEM) and rough surface morphology observed by atomic force microscopy (AFM). 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subjects Materials science
Molecular beam epitaxy
Transistors
Transmission electron microscopy
title A comparative study of metamorphic InP/InGaAs double heterojunction bipolar transistors with InP and InAIP buffer layers grown by molecular beam epitaxy
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