Atomic Layer Deposition of ZrO2 Thin Films Using Dichlorobis[bis-(trimethylsilyl)amido]zirconium and Water

A new zirconium precursor, (ZrCl2[N(SiMe3)2]2), and H2O oxidant were used to deposit ZrO2 films on a Si substrate, for alternative gate dielectrics, via atomic layer deposition (ALD) in the temperature range 150–350 °C. The film growth showed the self‐limiting characteristic of ALD, with a maximum g...

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