Temperature and pH dependence of the electroless Ni–P deposition on silicon
The sensitization, activation, nucleation and growth of electroless Ni–P deposition on silicon in an acid plating bath with sodium hydrophosphite as reducing agent and sodium succinate as complexing agent were studied by transmission electron microscopy, field emission scanning electron microscopy a...
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Veröffentlicht in: | Thin solid films 2006-07, Vol.510 (1), p.102-106 |
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description | The sensitization, activation, nucleation and growth of electroless Ni–P deposition on silicon in an acid plating bath with sodium hydrophosphite as reducing agent and sodium succinate as complexing agent were studied by transmission electron microscopy, field emission scanning electron microscopy and atomic force microscopy. The results show that a continuous polycrystalline SnCl
2 film was formed on the silicon surface in the sensitization process, and small crystalline Pd particles were dispersedly produced on SnCl
2 film in the activation process. In the initial deposition stage, the small Ni–P particles had already emerged on the silicon surface in a deposition time of less than 2 s. When Ni–P particles grew, their size increased but their number decreased, and they later developed into a columnar structure. The deposition rate of the electroless Ni–P deposit increased as the pH value and the temperature of the plating bath increased (from 1.36 to 29.66 μm/h). The activation energy of the electroless Ni–P deposition on silicon increased as the pH value of the plating bath decreased (from 68.8 to 79.4 kJ/mol). |
doi_str_mv | 10.1016/j.tsf.2005.12.203 |
format | Article |
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2 film was formed on the silicon surface in the sensitization process, and small crystalline Pd particles were dispersedly produced on SnCl
2 film in the activation process. In the initial deposition stage, the small Ni–P particles had already emerged on the silicon surface in a deposition time of less than 2 s. When Ni–P particles grew, their size increased but their number decreased, and they later developed into a columnar structure. The deposition rate of the electroless Ni–P deposit increased as the pH value and the temperature of the plating bath increased (from 1.36 to 29.66 μm/h). The activation energy of the electroless Ni–P deposition on silicon increased as the pH value of the plating bath decreased (from 68.8 to 79.4 kJ/mol).</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/j.tsf.2005.12.203</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Electroless deposition ; Electron and ion emission by liquids and solids; impact phenomena ; Equations of state, phase equilibria, and phase transitions ; Exact sciences and technology ; Field emission, ionization, evaporation, and desorption ; General studies of phase transitions ; Nickel ; Nucleation ; Physics ; Scanning electron microscopy</subject><ispartof>Thin solid films, 2006-07, Vol.510 (1), p.102-106</ispartof><rights>2006 Elsevier B.V.</rights><rights>2007 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c389t-47f7f6d25b5773c07a5717c2438b920a727ebf84479e7f1963c8f4397c1018c3</citedby><cites>FETCH-LOGICAL-c389t-47f7f6d25b5773c07a5717c2438b920a727ebf84479e7f1963c8f4397c1018c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.tsf.2005.12.203$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=17785640$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Liu, W.L.</creatorcontrib><creatorcontrib>Hsieh, S.H.</creatorcontrib><creatorcontrib>Tsai, T.K.</creatorcontrib><creatorcontrib>Chen, W.J.</creatorcontrib><creatorcontrib>Wu, Shin Shyan</creatorcontrib><title>Temperature and pH dependence of the electroless Ni–P deposition on silicon</title><title>Thin solid films</title><description>The sensitization, activation, nucleation and growth of electroless Ni–P deposition on silicon in an acid plating bath with sodium hydrophosphite as reducing agent and sodium succinate as complexing agent were studied by transmission electron microscopy, field emission scanning electron microscopy and atomic force microscopy. The results show that a continuous polycrystalline SnCl
2 film was formed on the silicon surface in the sensitization process, and small crystalline Pd particles were dispersedly produced on SnCl
2 film in the activation process. In the initial deposition stage, the small Ni–P particles had already emerged on the silicon surface in a deposition time of less than 2 s. When Ni–P particles grew, their size increased but their number decreased, and they later developed into a columnar structure. The deposition rate of the electroless Ni–P deposit increased as the pH value and the temperature of the plating bath increased (from 1.36 to 29.66 μm/h). The activation energy of the electroless Ni–P deposition on silicon increased as the pH value of the plating bath decreased (from 68.8 to 79.4 kJ/mol).</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Electroless deposition</subject><subject>Electron and ion emission by liquids and solids; impact phenomena</subject><subject>Equations of state, phase equilibria, and phase transitions</subject><subject>Exact sciences and technology</subject><subject>Field emission, ionization, evaporation, and desorption</subject><subject>General studies of phase transitions</subject><subject>Nickel</subject><subject>Nucleation</subject><subject>Physics</subject><subject>Scanning electron microscopy</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNqFkMtqHDEQRUWwIePHB3jXm3jXk9Kju9RkZUycCdiJF7MXGnWJaOhpdaSeQHb-B_-hv8QaxpBdDAV3c24VdRi74rDkwNvP2-Wc_VIANEsuSsoPbME1drVAyU_YAkBB3UIHH9lZzlsA4ELIBXtY026iZOd9osqOfTWtqp4mGnsaHVXRV_MvqmggN6c4UM7Vj_Dy9Px4gGIOc4hjVSaHIbg4XrBTb4dMl295ztZ3X9e3q_r-57fvtzf3tZO6m2uFHn3bi2bTIEoHaBvk6ISSetMJsCiQNl4rhR2h510rnfZKdujKr9rJc3Z9XDul-HtPeTa7kB0Ngx0p7rMRHSqNonkf1By0RFVAfgRdijkn8mZKYWfTX8PBHASbrSmCzUGw4aKkLJ1Pb8ttdnbwyY4u5H9FRN20Cgr35chRMfInUDLZhYPdPqSi1fQx_OfKK4LKj_s</recordid><startdate>20060703</startdate><enddate>20060703</enddate><creator>Liu, W.L.</creator><creator>Hsieh, S.H.</creator><creator>Tsai, T.K.</creator><creator>Chen, W.J.</creator><creator>Wu, Shin Shyan</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><scope>7TB</scope><scope>FR3</scope></search><sort><creationdate>20060703</creationdate><title>Temperature and pH dependence of the electroless Ni–P deposition on silicon</title><author>Liu, W.L. ; Hsieh, S.H. ; Tsai, T.K. ; Chen, W.J. ; Wu, Shin Shyan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c389t-47f7f6d25b5773c07a5717c2438b920a727ebf84479e7f1963c8f4397c1018c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Electroless deposition</topic><topic>Electron and ion emission by liquids and solids; impact phenomena</topic><topic>Equations of state, phase equilibria, and phase transitions</topic><topic>Exact sciences and technology</topic><topic>Field emission, ionization, evaporation, and desorption</topic><topic>General studies of phase transitions</topic><topic>Nickel</topic><topic>Nucleation</topic><topic>Physics</topic><topic>Scanning electron microscopy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liu, W.L.</creatorcontrib><creatorcontrib>Hsieh, S.H.</creatorcontrib><creatorcontrib>Tsai, T.K.</creatorcontrib><creatorcontrib>Chen, W.J.</creatorcontrib><creatorcontrib>Wu, Shin Shyan</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Engineering Research Database</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Liu, W.L.</au><au>Hsieh, S.H.</au><au>Tsai, T.K.</au><au>Chen, W.J.</au><au>Wu, Shin Shyan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Temperature and pH dependence of the electroless Ni–P deposition on silicon</atitle><jtitle>Thin solid films</jtitle><date>2006-07-03</date><risdate>2006</risdate><volume>510</volume><issue>1</issue><spage>102</spage><epage>106</epage><pages>102-106</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>The sensitization, activation, nucleation and growth of electroless Ni–P deposition on silicon in an acid plating bath with sodium hydrophosphite as reducing agent and sodium succinate as complexing agent were studied by transmission electron microscopy, field emission scanning electron microscopy and atomic force microscopy. The results show that a continuous polycrystalline SnCl
2 film was formed on the silicon surface in the sensitization process, and small crystalline Pd particles were dispersedly produced on SnCl
2 film in the activation process. In the initial deposition stage, the small Ni–P particles had already emerged on the silicon surface in a deposition time of less than 2 s. When Ni–P particles grew, their size increased but their number decreased, and they later developed into a columnar structure. The deposition rate of the electroless Ni–P deposit increased as the pH value and the temperature of the plating bath increased (from 1.36 to 29.66 μm/h). The activation energy of the electroless Ni–P deposition on silicon increased as the pH value of the plating bath decreased (from 68.8 to 79.4 kJ/mol).</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/j.tsf.2005.12.203</doi><tpages>5</tpages></addata></record> |
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subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Electroless deposition Electron and ion emission by liquids and solids impact phenomena Equations of state, phase equilibria, and phase transitions Exact sciences and technology Field emission, ionization, evaporation, and desorption General studies of phase transitions Nickel Nucleation Physics Scanning electron microscopy |
title | Temperature and pH dependence of the electroless Ni–P deposition on silicon |
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