Improving Switching Characteristics of 4H-SiC Junction Rectifiers Using Epitaxial and Implanted Anodes with Epitaxial Refill

The on-state and switching performance of high voltage 4H-SiC junction rectifiers are compared using numerical simulations and experimental characterization. Epitaxial and implanted anode PiN diodes as well as novel, advanced rectifiers have been fabricated in 4H-SiC using 110μm thick drift layers....

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Veröffentlicht in:	Materials science forum 2006-10, Vol.527-529, p.1363-1366
Hauptverfasser:	Bhat, I., Chow, T. Paul, Stahlbush, Robert E., Gutmann, Ronald J., Losee, Peter A., Kumar, R.J., Li, Can Hua
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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