Theoretical analysis of pit formation in GaAs surfaces in picosecond and femtosecond laser ablation regimes

In the present work, the effect of pit formation in laser-ablated GaAs surfaces is analyzed theoretically. The formation of pits has been previously observed during laser ablation experiments in the picosecond (35 ps) and the femtosecond (100 fs) regimes. In the present work, it is shown theoretical...

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Veröffentlicht in:	Optics and laser technology 2006-11, Vol.38 (8), p.649-653
Hauptverfasser:	Srivastava, Piyush Kumar, Pratap Singh, Amit, Kapoor, Avinashi
Format:	Artikel
Sprache:	eng
Schlagworte:	Biological and medical applications Cross-disciplinary physics: materials science rheology Exact sciences and technology Femtosecond Fundamental areas of phenomenology (including applications) GaAs Industrial applications Materials science Materials synthesis materials processing Metal Optics Physics Picosecond Semiconductor Swiss Cheese model Thermal conductivity
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