Theoretical analysis of pit formation in GaAs surfaces in picosecond and femtosecond laser ablation regimes
In the present work, the effect of pit formation in laser-ablated GaAs surfaces is analyzed theoretically. The formation of pits has been previously observed during laser ablation experiments in the picosecond (35 ps) and the femtosecond (100 fs) regimes. In the present work, it is shown theoretical...
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| Veröffentlicht in: | Optics and laser technology 2006-11, Vol.38 (8), p.649-653 |
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| creator | Srivastava, Piyush Kumar Pratap Singh, Amit Kapoor, Avinashi |
| description | In the present work, the effect of pit formation in laser-ablated GaAs surfaces is analyzed theoretically. The formation of pits has been previously observed during laser ablation experiments in the picosecond (35
ps) and the femtosecond (100
fs) regimes. In the present work, it is shown theoretically that the thermal conductivity of the laser-ablated GaAs surface is changed both in the picosecond and the femtosecond regimes as compared to the unexposed surface. The variation in thermal conductivity of an ablated surface depends upon the fraction of the thermal conductivity of the cracks
(
α
)
, and the fraction of the cross-sectional area of the cracks
(
γ
)
. In the picosecond regime (35
ps), the thermal conductivity of the ablated GaAs surface decreases (both for single and multiple laser pulses) for all the values of
α
and
γ
(between 0.1 and 0.9) as compared to the thermal conductivity of a smooth film with no pits. In the femtosecond regime (100
fs), the thermal conductivity of the ablated surface increases or decreases (both for single and multiple laser pulses) depending upon the value of
α
and
γ
. |
| doi_str_mv | 10.1016/j.optlastec.2004.12.010 |
| format | Article |
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ps) and the femtosecond (100
fs) regimes. In the present work, it is shown theoretically that the thermal conductivity of the laser-ablated GaAs surface is changed both in the picosecond and the femtosecond regimes as compared to the unexposed surface. The variation in thermal conductivity of an ablated surface depends upon the fraction of the thermal conductivity of the cracks
(
α
)
, and the fraction of the cross-sectional area of the cracks
(
γ
)
. In the picosecond regime (35
ps), the thermal conductivity of the ablated GaAs surface decreases (both for single and multiple laser pulses) for all the values of
α
and
γ
(between 0.1 and 0.9) as compared to the thermal conductivity of a smooth film with no pits. In the femtosecond regime (100
fs), the thermal conductivity of the ablated surface increases or decreases (both for single and multiple laser pulses) depending upon the value of
α
and
γ
.</description><identifier>ISSN: 0030-3992</identifier><identifier>EISSN: 1879-2545</identifier><identifier>DOI: 10.1016/j.optlastec.2004.12.010</identifier><identifier>CODEN: OLTCAS</identifier><language>eng</language><publisher>Oxford: Elsevier Ltd</publisher><subject>Biological and medical applications ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Femtosecond ; Fundamental areas of phenomenology (including applications) ; GaAs ; Industrial applications ; Materials science ; Materials synthesis; materials processing ; Metal ; Optics ; Physics ; Picosecond ; Semiconductor ; Swiss Cheese model ; Thermal conductivity</subject><ispartof>Optics and laser technology, 2006-11, Vol.38 (8), p.649-653</ispartof><rights>2005 Elsevier Ltd</rights><rights>2006 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c376t-cfe02a5b3437a207c9f0bc51baa0d3e4f598a3a7526a1c082343a3bf7153a1903</citedby><cites>FETCH-LOGICAL-c376t-cfe02a5b3437a207c9f0bc51baa0d3e4f598a3a7526a1c082343a3bf7153a1903</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.optlastec.2004.12.010$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3536,27903,27904,45974</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=17822038$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Srivastava, Piyush Kumar</creatorcontrib><creatorcontrib>Pratap Singh, Amit</creatorcontrib><creatorcontrib>Kapoor, Avinashi</creatorcontrib><title>Theoretical analysis of pit formation in GaAs surfaces in picosecond and femtosecond laser ablation regimes</title><title>Optics and laser technology</title><description>In the present work, the effect of pit formation in laser-ablated GaAs surfaces is analyzed theoretically. The formation of pits has been previously observed during laser ablation experiments in the picosecond (35
ps) and the femtosecond (100
fs) regimes. In the present work, it is shown theoretically that the thermal conductivity of the laser-ablated GaAs surface is changed both in the picosecond and the femtosecond regimes as compared to the unexposed surface. The variation in thermal conductivity of an ablated surface depends upon the fraction of the thermal conductivity of the cracks
(
α
)
, and the fraction of the cross-sectional area of the cracks
(
γ
)
. In the picosecond regime (35
ps), the thermal conductivity of the ablated GaAs surface decreases (both for single and multiple laser pulses) for all the values of
α
and
γ
(between 0.1 and 0.9) as compared to the thermal conductivity of a smooth film with no pits. In the femtosecond regime (100
fs), the thermal conductivity of the ablated surface increases or decreases (both for single and multiple laser pulses) depending upon the value of
α
and
γ
.</description><subject>Biological and medical applications</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Femtosecond</subject><subject>Fundamental areas of phenomenology (including applications)</subject><subject>GaAs</subject><subject>Industrial applications</subject><subject>Materials science</subject><subject>Materials synthesis; materials processing</subject><subject>Metal</subject><subject>Optics</subject><subject>Physics</subject><subject>Picosecond</subject><subject>Semiconductor</subject><subject>Swiss Cheese model</subject><subject>Thermal conductivity</subject><issn>0030-3992</issn><issn>1879-2545</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNqFkE1v1DAQhi0EEkvhN-AL3JKO7U2cHFcVtEiVuJSzNXHG4CWJgyeL1H-PV1vg2JM11vPOxyPEewW1AtVeH-u0bhPyRr7WAPta6RoUvBA71dm-0s2-eSl2AAYq0_f6tXjDfIQCto3ZiZ8PPyhl2qLHSeKC0yNHlinINW4ypDzjFtMi4yJv8cCSTzmgJz5_rNEnJp-WsQRHGWje_tZlHcoSh-mSzvQ9zsRvxauAE9O7p_dKfPv86eHmrrr_evvl5nBfeWPbrfKBQGMzmL2xqMH6PsDgGzUgwmhoH5q-Q4O20S0qD50uIJohWNUYVD2YK_Hx0nfN6deJeHNzZE_ThAulEzvdW911rS2gvYA-J-ZMwa05zpgfnQJ3luuO7p9cd5brlHZFbkl-eBqBXMyFjIuP_D9uO63BdIU7XDgq9_6OlB37SIunMWbymxtTfHbWH6Qclg0</recordid><startdate>20061101</startdate><enddate>20061101</enddate><creator>Srivastava, Piyush Kumar</creator><creator>Pratap Singh, Amit</creator><creator>Kapoor, Avinashi</creator><general>Elsevier Ltd</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>L7M</scope></search><sort><creationdate>20061101</creationdate><title>Theoretical analysis of pit formation in GaAs surfaces in picosecond and femtosecond laser ablation regimes</title><author>Srivastava, Piyush Kumar ; Pratap Singh, Amit ; Kapoor, Avinashi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c376t-cfe02a5b3437a207c9f0bc51baa0d3e4f598a3a7526a1c082343a3bf7153a1903</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Biological and medical applications</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Femtosecond</topic><topic>Fundamental areas of phenomenology (including applications)</topic><topic>GaAs</topic><topic>Industrial applications</topic><topic>Materials science</topic><topic>Materials synthesis; materials processing</topic><topic>Metal</topic><topic>Optics</topic><topic>Physics</topic><topic>Picosecond</topic><topic>Semiconductor</topic><topic>Swiss Cheese model</topic><topic>Thermal conductivity</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Srivastava, Piyush Kumar</creatorcontrib><creatorcontrib>Pratap Singh, Amit</creatorcontrib><creatorcontrib>Kapoor, Avinashi</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Optics and laser technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Srivastava, Piyush Kumar</au><au>Pratap Singh, Amit</au><au>Kapoor, Avinashi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Theoretical analysis of pit formation in GaAs surfaces in picosecond and femtosecond laser ablation regimes</atitle><jtitle>Optics and laser technology</jtitle><date>2006-11-01</date><risdate>2006</risdate><volume>38</volume><issue>8</issue><spage>649</spage><epage>653</epage><pages>649-653</pages><issn>0030-3992</issn><eissn>1879-2545</eissn><coden>OLTCAS</coden><abstract>In the present work, the effect of pit formation in laser-ablated GaAs surfaces is analyzed theoretically. The formation of pits has been previously observed during laser ablation experiments in the picosecond (35
ps) and the femtosecond (100
fs) regimes. In the present work, it is shown theoretically that the thermal conductivity of the laser-ablated GaAs surface is changed both in the picosecond and the femtosecond regimes as compared to the unexposed surface. The variation in thermal conductivity of an ablated surface depends upon the fraction of the thermal conductivity of the cracks
(
α
)
, and the fraction of the cross-sectional area of the cracks
(
γ
)
. In the picosecond regime (35
ps), the thermal conductivity of the ablated GaAs surface decreases (both for single and multiple laser pulses) for all the values of
α
and
γ
(between 0.1 and 0.9) as compared to the thermal conductivity of a smooth film with no pits. In the femtosecond regime (100
fs), the thermal conductivity of the ablated surface increases or decreases (both for single and multiple laser pulses) depending upon the value of
α
and
γ
.</abstract><cop>Oxford</cop><pub>Elsevier Ltd</pub><doi>10.1016/j.optlastec.2004.12.010</doi><tpages>5</tpages></addata></record> |
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| ispartof | Optics and laser technology, 2006-11, Vol.38 (8), p.649-653 |
| issn | 0030-3992 1879-2545 |
| language | eng |
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| source | Elsevier ScienceDirect Journals |
| subjects | Biological and medical applications Cross-disciplinary physics: materials science rheology Exact sciences and technology Femtosecond Fundamental areas of phenomenology (including applications) GaAs Industrial applications Materials science Materials synthesis materials processing Metal Optics Physics Picosecond Semiconductor Swiss Cheese model Thermal conductivity |
| title | Theoretical analysis of pit formation in GaAs surfaces in picosecond and femtosecond laser ablation regimes |
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