High Power Photoconductive Switch of 4H-SiC with Damage-Free Electrodes by Using n+-GaN Subcontact Layer

4H SiC high power photoconductive semiconductor switching devices were fabricated. A highly doped n+-GaN subcontact epilayer was grown on SiC by organometallic vapor phase epitaxy in order to improve ohmic contact and avoid contact damage or degradation due to current filamentation, under high power...

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Veröffentlicht in:	Materials science forum 2006-10, Vol.527-529, p.1387-1390
Hauptverfasser:	Johnstone, D., Zhu, K., Morkoç, Hadis, Fu, Y., Li, G., Ganguly, B., Litton, Cole W., Leach, J.H.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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