The improvement of thermal stability of nickel silicide by adding a thin Zr interlayer

This is the first report of a technique for inserting a thin Zr interlayer into a nickel film to improve the thermal stability of the silicide formed from this film. The sheet resistance of resulting Ni(Zr)Si film was lower than 2 Ω/□. X-ray diffraction and Raman spectral analysis showed that only t...

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Veröffentlicht in:	Microelectronic engineering 2006-02, Vol.83 (2), p.345-350
Hauptverfasser:	Huang, Wei, Zhang, Li-Chun, Gao, Yu-Zhi, Jin, Han-Yan
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Materials Microelectronic fabrication (materials and surfaces technology) Ni(Zr)Si Raman spectral analysis Rutherford backscattering spectrometry Schottky barrier diode Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices X-ray diffraction
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