Structural analysis of undoped microcrystalline silicon thin films deposited by PECVD technique
Undoped microcrystalline silicon thin films have been deposited by radio frequency powered plasma enhanced chemical vapour deposition technique. The structural order of silicon network in the films has been studied by Raman spectroscopy. The role of bonded hydrogen in the films and their consequence...
Gespeichert in:
| Veröffentlicht in: | Journal of physics. D, Applied physics Applied physics, 2004-07, Vol.37 (13), p.1736-1741 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1741 |
|---|---|
| container_issue | 13 |
| container_start_page | 1736 |
| container_title | Journal of physics. D, Applied physics |
| container_volume | 37 |
| creator | Mukhopadhyay, Sumita Das, Chandan Ray, Swati |
| description | Undoped microcrystalline silicon thin films have been deposited by radio frequency powered plasma enhanced chemical vapour deposition technique. The structural order of silicon network in the films has been studied by Raman spectroscopy. The role of bonded hydrogen in the films and their consequences in microstructural defects have been obtained from the results of Fourier transform infrared spectroscopy. The presence of microcrystals and growth morphology of the microcrystalline films have been investigated by transmission and scanning electron microscopy, respectively. Optimized deposition conditions are obtained where properties of the microcrystalline films are suitable as absorber layer of solar cells. A highly conducting undoped microcrystalline film with 87% crystalline fraction (fc) is obtained, which exhibits columnar structure. |
| doi_str_mv | 10.1088/0022-3727/37/13/003 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_iop_p</sourceid><recordid>TN_cdi_proquest_miscellaneous_29683446</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>29683446</sourcerecordid><originalsourceid>FETCH-LOGICAL-c448t-2e64acc7ee470b59864c48fd31d05cb8083b4597bb6f789525208e742a7bf1a43</originalsourceid><addsrcrecordid>eNqNkEtLxDAUhYMoOI7-AjfZ6EKokzRpki5lHB8woOBjG9I0YSLpw6Rd9N-bYQZd6MLNvRz4zrncA8A5RtcYCbFAKM8zwnO-IHyBSdLkAMwwYThjlJFDMPsmjsFJjB8IoYIJPAPyZQijHsagPFSt8lN0EXYWjm3d9aaGjdOh02GKg_LetQZG553uWjhsXAut802Etem76IZEVxN8Xi3fb-Fg9KZ1n6M5BUdW-WjO9nsO3u5Wr8uHbP10_7i8WWeaUjFkuWFUac2NoRxVRSkY1VTYmuAaFboSSJCKFiWvKma5KIu8yJEwnOaKVxYrSubgcpfbhy6djYNsXNTGe9WabowyL5kgNHUxB2QHpr9iDMbKPrhGhUliJLdlym1VcltVGhKTpElyXezjVdTK26Ba7eKPtSgRZ5gn7nrHua7_Z_DVb8MfoOxrS74AW3mP3g</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>29683446</pqid></control><display><type>article</type><title>Structural analysis of undoped microcrystalline silicon thin films deposited by PECVD technique</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Mukhopadhyay, Sumita ; Das, Chandan ; Ray, Swati</creator><creatorcontrib>Mukhopadhyay, Sumita ; Das, Chandan ; Ray, Swati</creatorcontrib><description>Undoped microcrystalline silicon thin films have been deposited by radio frequency powered plasma enhanced chemical vapour deposition technique. The structural order of silicon network in the films has been studied by Raman spectroscopy. The role of bonded hydrogen in the films and their consequences in microstructural defects have been obtained from the results of Fourier transform infrared spectroscopy. The presence of microcrystals and growth morphology of the microcrystalline films have been investigated by transmission and scanning electron microscopy, respectively. Optimized deposition conditions are obtained where properties of the microcrystalline films are suitable as absorber layer of solar cells. A highly conducting undoped microcrystalline film with 87% crystalline fraction (fc) is obtained, which exhibits columnar structure.</description><identifier>ISSN: 0022-3727</identifier><identifier>EISSN: 1361-6463</identifier><identifier>DOI: 10.1088/0022-3727/37/13/003</identifier><identifier>CODEN: JPAPBE</identifier><language>eng</language><publisher>Bristol: IOP Publishing</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Exact sciences and technology ; Physics ; Structure and morphology; thickness ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology</subject><ispartof>Journal of physics. D, Applied physics, 2004-07, Vol.37 (13), p.1736-1741</ispartof><rights>2004 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c448t-2e64acc7ee470b59864c48fd31d05cb8083b4597bb6f789525208e742a7bf1a43</citedby><cites>FETCH-LOGICAL-c448t-2e64acc7ee470b59864c48fd31d05cb8083b4597bb6f789525208e742a7bf1a43</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1088/0022-3727/37/13/003/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>315,781,785,27929,27930,53835,53915</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=15907617$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Mukhopadhyay, Sumita</creatorcontrib><creatorcontrib>Das, Chandan</creatorcontrib><creatorcontrib>Ray, Swati</creatorcontrib><title>Structural analysis of undoped microcrystalline silicon thin films deposited by PECVD technique</title><title>Journal of physics. D, Applied physics</title><description>Undoped microcrystalline silicon thin films have been deposited by radio frequency powered plasma enhanced chemical vapour deposition technique. The structural order of silicon network in the films has been studied by Raman spectroscopy. The role of bonded hydrogen in the films and their consequences in microstructural defects have been obtained from the results of Fourier transform infrared spectroscopy. The presence of microcrystals and growth morphology of the microcrystalline films have been investigated by transmission and scanning electron microscopy, respectively. Optimized deposition conditions are obtained where properties of the microcrystalline films are suitable as absorber layer of solar cells. A highly conducting undoped microcrystalline film with 87% crystalline fraction (fc) is obtained, which exhibits columnar structure.</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Structure and morphology; thickness</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><issn>0022-3727</issn><issn>1361-6463</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNqNkEtLxDAUhYMoOI7-AjfZ6EKokzRpki5lHB8woOBjG9I0YSLpw6Rd9N-bYQZd6MLNvRz4zrncA8A5RtcYCbFAKM8zwnO-IHyBSdLkAMwwYThjlJFDMPsmjsFJjB8IoYIJPAPyZQijHsagPFSt8lN0EXYWjm3d9aaGjdOh02GKg_LetQZG553uWjhsXAut802Etem76IZEVxN8Xi3fb-Fg9KZ1n6M5BUdW-WjO9nsO3u5Wr8uHbP10_7i8WWeaUjFkuWFUac2NoRxVRSkY1VTYmuAaFboSSJCKFiWvKma5KIu8yJEwnOaKVxYrSubgcpfbhy6djYNsXNTGe9WabowyL5kgNHUxB2QHpr9iDMbKPrhGhUliJLdlym1VcltVGhKTpElyXezjVdTK26Ba7eKPtSgRZ5gn7nrHua7_Z_DVb8MfoOxrS74AW3mP3g</recordid><startdate>20040707</startdate><enddate>20040707</enddate><creator>Mukhopadhyay, Sumita</creator><creator>Das, Chandan</creator><creator>Ray, Swati</creator><general>IOP Publishing</general><general>Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20040707</creationdate><title>Structural analysis of undoped microcrystalline silicon thin films deposited by PECVD technique</title><author>Mukhopadhyay, Sumita ; Das, Chandan ; Ray, Swati</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c448t-2e64acc7ee470b59864c48fd31d05cb8083b4597bb6f789525208e742a7bf1a43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Structure and morphology; thickness</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mukhopadhyay, Sumita</creatorcontrib><creatorcontrib>Das, Chandan</creatorcontrib><creatorcontrib>Ray, Swati</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of physics. D, Applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Mukhopadhyay, Sumita</au><au>Das, Chandan</au><au>Ray, Swati</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Structural analysis of undoped microcrystalline silicon thin films deposited by PECVD technique</atitle><jtitle>Journal of physics. D, Applied physics</jtitle><date>2004-07-07</date><risdate>2004</risdate><volume>37</volume><issue>13</issue><spage>1736</spage><epage>1741</epage><pages>1736-1741</pages><issn>0022-3727</issn><eissn>1361-6463</eissn><coden>JPAPBE</coden><abstract>Undoped microcrystalline silicon thin films have been deposited by radio frequency powered plasma enhanced chemical vapour deposition technique. The structural order of silicon network in the films has been studied by Raman spectroscopy. The role of bonded hydrogen in the films and their consequences in microstructural defects have been obtained from the results of Fourier transform infrared spectroscopy. The presence of microcrystals and growth morphology of the microcrystalline films have been investigated by transmission and scanning electron microscopy, respectively. Optimized deposition conditions are obtained where properties of the microcrystalline films are suitable as absorber layer of solar cells. A highly conducting undoped microcrystalline film with 87% crystalline fraction (fc) is obtained, which exhibits columnar structure.</abstract><cop>Bristol</cop><pub>IOP Publishing</pub><doi>10.1088/0022-3727/37/13/003</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0022-3727 |
| ispartof | Journal of physics. D, Applied physics, 2004-07, Vol.37 (13), p.1736-1741 |
| issn | 0022-3727 1361-6463 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_29683446 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
| title | Structural analysis of undoped microcrystalline silicon thin films deposited by PECVD technique |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-12T23%3A56%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_iop_p&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Structural%20analysis%20of%20undoped%20microcrystalline%20silicon%20thin%20films%20deposited%20by%20PECVD%20technique&rft.jtitle=Journal%20of%20physics.%20D,%20Applied%20physics&rft.au=Mukhopadhyay,%20Sumita&rft.date=2004-07-07&rft.volume=37&rft.issue=13&rft.spage=1736&rft.epage=1741&rft.pages=1736-1741&rft.issn=0022-3727&rft.eissn=1361-6463&rft.coden=JPAPBE&rft_id=info:doi/10.1088/0022-3727/37/13/003&rft_dat=%3Cproquest_iop_p%3E29683446%3C/proquest_iop_p%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=29683446&rft_id=info:pmid/&rfr_iscdi=true |