Synthesis of AlGaAs-based strained separately confined heterostructure laser diodes by low temperature liquid-phase epitaxy

AlGaAs-based strained separately confined heterostructure laser diodes operating in the 800–900 nm wavelength range have been fabricated from the structures grown using low temperature liquid-phase epitaxy (LPE). Addition of P/Sb to the active region introduces tensile/compressive strain in the structure and is found useful in tuning the emission wavelength. Details of the growth experiments, strain measurements, fabrication and characterization of the laser diodes are described.