Structural and optical properties of Si-nanoclusters embedded in silicon dioxide

In this paper we report on light emission from silicon nanostructures embedded in silicon oxide prepared by rf co-sputtering in argon of pure silicon and silicon dioxide. The concentration of excess silicon was varied in the range 0.5–1.8%. Specimens were subjected to thermal anneals up to 1100 °C i...

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Veröffentlicht in:	Physica. B, Condensed matter Condensed matter, 2006-04, Vol.376, p.868-871
Hauptverfasser:	Huy, P.T., Thu, V.V., Chien, N.D., Ammerlaan, C.A.J., Weber, J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Nanosilicon Photoluminescence XPS
Online-Zugang:	Volltext
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