Effects of sapphire substrate annealing on ZnO epitaxial films grown by MOCVD

Effects of sapphire substrate annealing on ZnO epitaxial films grown by MOCVD

The annealing effects of sapphire substrate on the quality of epitaxial ZnO films grown by metalorganic chemical vapor deposition (MOCVD) were studied. The atomic steps formed on (0 0 0 1) sapphire (alpha-Al2O3) substrate surface by annealing at high temperature was analyzed by atomic force microsco...

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Veröffentlicht in:Applied surface science 2006-12, Vol.253 (4), p.1745-1747
Hauptverfasser: Wang, Yinzhen, Wang, Shunquan, Zhou, Shengming, Xu, Jun, Ye, Jiandong, Gu, Shulin, Zhang, Rong, Ren, Qiushi
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container_end_page 1747
container_issue 4
container_start_page 1745
container_title Applied surface science
container_volume 253
creator Wang, Yinzhen
Wang, Shunquan
Zhou, Shengming
Xu, Jun
Ye, Jiandong
Gu, Shulin
Zhang, Rong
Ren, Qiushi
description The annealing effects of sapphire substrate on the quality of epitaxial ZnO films grown by metalorganic chemical vapor deposition (MOCVD) were studied. The atomic steps formed on (0 0 0 1) sapphire (alpha-Al2O3) substrate surface by annealing at high temperature was analyzed by atomic force microscopy (AFM). The annealing effects of sapphire substrate on the ZnO films were examined by X-ray diffraction (XRD), AFM and photoluminescence (PL) measurements. Experimental results indicate that the film quality is strongly affected by annealing treatment of the sapphire substrate surface. The optimum annealing temperature of sapphire substrates is given.
doi_str_mv 10.1016/j.apsusc.2006.03.020
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title Effects of sapphire substrate annealing on ZnO epitaxial films grown by MOCVD
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