Strain and wafer curvature of 3C-SiC films on silicon: influence of the growth conditions
We study the influence of the growth conditions on the residual strain and related optical and structural properties in the case of 3C‐SiC films grown on (001) silicon substrates. We show that two possible mechanisms compete to manage the final sample bow: one is by controlling the composition of th...
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| Veröffentlicht in: | Physica status solidi. A, Applications and materials science Applications and materials science, 2007-04, Vol.204 (4), p.981-986 |
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| container_end_page | 986 |
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| container_issue | 4 |
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| container_title | Physica status solidi. A, Applications and materials science |
| container_volume | 204 |
| creator | Zielinski, M. Ndiaye, S. Chassagne, T. Juillaguet, S. Lewandowska, R. Portail, M. Leycuras, A. Camassel, J. |
| description | We study the influence of the growth conditions on the residual strain and related optical and structural properties in the case of 3C‐SiC films grown on (001) silicon substrates. We show that two possible mechanisms compete to manage the final sample bow: one is by controlling the composition of the gaseous phase (C/Si ratio) the other one by adjusting the growth temperature and duration (creep effect). In both cases, we compare the low temperature photoluminescence spectra of samples grown under tensile or compressive final stress. We show that better results can be obtained when using the creep effect. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
| doi_str_mv | 10.1002/pssa.200674130 |
| format | Article |
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We show that two possible mechanisms compete to manage the final sample bow: one is by controlling the composition of the gaseous phase (C/Si ratio) the other one by adjusting the growth temperature and duration (creep effect). In both cases, we compare the low temperature photoluminescence spectra of samples grown under tensile or compressive final stress. We show that better results can be obtained when using the creep effect. (© 2007 WILEY‐VCH Verlag GmbH & Co. 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A, Applications and materials science</title><addtitle>phys. stat. sol. (a)</addtitle><description>We study the influence of the growth conditions on the residual strain and related optical and structural properties in the case of 3C‐SiC films grown on (001) silicon substrates. We show that two possible mechanisms compete to manage the final sample bow: one is by controlling the composition of the gaseous phase (C/Si ratio) the other one by adjusting the growth temperature and duration (creep effect). In both cases, we compare the low temperature photoluminescence spectra of samples grown under tensile or compressive final stress. We show that better results can be obtained when using the creep effect. (© 2007 WILEY‐VCH Verlag GmbH & Co. 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(a)</addtitle><date>2007-04</date><risdate>2007</risdate><volume>204</volume><issue>4</issue><spage>981</spage><epage>986</epage><pages>981-986</pages><issn>1862-6300</issn><issn>0031-8965</issn><eissn>1862-6319</eissn><abstract>We study the influence of the growth conditions on the residual strain and related optical and structural properties in the case of 3C‐SiC films grown on (001) silicon substrates. We show that two possible mechanisms compete to manage the final sample bow: one is by controlling the composition of the gaseous phase (C/Si ratio) the other one by adjusting the growth temperature and duration (creep effect). In both cases, we compare the low temperature photoluminescence spectra of samples grown under tensile or compressive final stress. We show that better results can be obtained when using the creep effect. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/pssa.200674130</doi><tpages>6</tpages></addata></record> |
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| identifier | ISSN: 1862-6300 |
| ispartof | Physica status solidi. A, Applications and materials science, 2007-04, Vol.204 (4), p.981-986 |
| issn | 1862-6300 0031-8965 1862-6319 |
| language | eng |
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| source | Wiley Online Library Journals Frontfile Complete |
| subjects | 81.05.Hd 81.15.Gh 81.40.Lm Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Insulators Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics |
| title | Strain and wafer curvature of 3C-SiC films on silicon: influence of the growth conditions |
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