Structural and optical characterisation of thick InN epilayers grown with a single or two step growth process on GaN(0001)

High resolution transmission electron microscopy (HRTEM), Raman spectroscopy and temperature dependent photoluminescence (PL) are employed to compare the structural and optical properties of compact InN films grown by molecular beam epitaxy (MBE) on GaN/Al2O3(0001) with a single‐step (S) or a two‐st...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2006-01, Vol.203 (1), p.162-166
Hauptverfasser:	Delimitis, A., Gladkov, P., Komninou, Ph, Kehagias, Th, Arvanitidis, J., Ves, S., Katsikini, M., Dimakis, E., Georgakilas, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	61.72.Ff 68.37.Lp 68.55.Jk 78.30.Fs 78.55.Cr 81.05.Ea Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Exact sciences and technology Experimental determination of defects by diffraction and scattering Iii-v semiconductors Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Physics Structure of solids and liquids crystallography
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