Structural and optical characterisation of thick InN epilayers grown with a single or two step growth process on GaN(0001)
High resolution transmission electron microscopy (HRTEM), Raman spectroscopy and temperature dependent photoluminescence (PL) are employed to compare the structural and optical properties of compact InN films grown by molecular beam epitaxy (MBE) on GaN/Al2O3(0001) with a single‐step (S) or a two‐st...
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| Veröffentlicht in: | Physica status solidi. A, Applications and materials science Applications and materials science, 2006-01, Vol.203 (1), p.162-166 |
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| container_title | Physica status solidi. A, Applications and materials science |
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| creator | Delimitis, A. Gladkov, P. Komninou, Ph Kehagias, Th Arvanitidis, J. Ves, S. Katsikini, M. Dimakis, E. Georgakilas, A. |
| description | High resolution transmission electron microscopy (HRTEM), Raman spectroscopy and temperature dependent photoluminescence (PL) are employed to compare the structural and optical properties of compact InN films grown by molecular beam epitaxy (MBE) on GaN/Al2O3(0001) with a single‐step (S) or a two‐step (T) growth process. The S‐type film was grown at 300 °C, whilst the T‐type film was nucleated at the same temperature and overgrown at 410 °C. The T‐type film exhibits better structural and optical properties as indicated by a sharper InN/GaN interface, the lower threading dislocations density, sharper Raman peaks and higher intensity PL peaks. Quantitative comparison of the red‐shifted Raman E 22 peak and the lattice constants of S and T samples suggests that the InN epilayers are under different values of stress due to thermal reasons and point defects present in them. The PL emission peak difference of 32 meV between S and T provides further evidence of the unequal residual strain present in InN. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
| doi_str_mv | 10.1002/pssa.200563506 |
| format | Article |
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The S‐type film was grown at 300 °C, whilst the T‐type film was nucleated at the same temperature and overgrown at 410 °C. The T‐type film exhibits better structural and optical properties as indicated by a sharper InN/GaN interface, the lower threading dislocations density, sharper Raman peaks and higher intensity PL peaks. Quantitative comparison of the red‐shifted Raman E 22 peak and the lattice constants of S and T samples suggests that the InN epilayers are under different values of stress due to thermal reasons and point defects present in them. The PL emission peak difference of 32 meV between S and T provides further evidence of the unequal residual strain present in InN. (© 2006 WILEY‐VCH Verlag GmbH & Co. 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A, Applications and materials science, 2006-01, Vol.203 (1), p.162-166</ispartof><rights>Copyright © 2006 WILEY‐VCH Verlag GmbH & Co. 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A, Applications and materials science</title><addtitle>phys. stat. sol. (a)</addtitle><description>High resolution transmission electron microscopy (HRTEM), Raman spectroscopy and temperature dependent photoluminescence (PL) are employed to compare the structural and optical properties of compact InN films grown by molecular beam epitaxy (MBE) on GaN/Al2O3(0001) with a single‐step (S) or a two‐step (T) growth process. The S‐type film was grown at 300 °C, whilst the T‐type film was nucleated at the same temperature and overgrown at 410 °C. The T‐type film exhibits better structural and optical properties as indicated by a sharper InN/GaN interface, the lower threading dislocations density, sharper Raman peaks and higher intensity PL peaks. Quantitative comparison of the red‐shifted Raman E 22 peak and the lattice constants of S and T samples suggests that the InN epilayers are under different values of stress due to thermal reasons and point defects present in them. The PL emission peak difference of 32 meV between S and T provides further evidence of the unequal residual strain present in InN. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</description><subject>61.72.Ff</subject><subject>68.37.Lp</subject><subject>68.55.Jk</subject><subject>78.30.Fs</subject><subject>78.55.Cr</subject><subject>81.05.Ea</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Defects and impurities in crystals; microstructure</subject><subject>Exact sciences and technology</subject><subject>Experimental determination of defects by diffraction and scattering</subject><subject>Iii-v semiconductors</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Photoluminescence</subject><subject>Physics</subject><subject>Structure of solids and liquids; crystallography</subject><issn>1862-6300</issn><issn>0031-8965</issn><issn>1862-6319</issn><issn>1521-396X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNqFkEFvEzEQhVeISpTClbMvIDhsGHvX9u6ximhaKVqQEsTRmnrtxnS7XmxHafrr65IqcOtpRjPvvRl9RfGBwowCsK9TjDhjAFxUHMSr4pQ2gpWiou3rYw_wpngb42-AmteSnhYPqxS2Om0DDgTHnvgpOZ17vcGAOpngIibnR-ItSRunb8nV2BEzuQH3JkRyE_xuJDuXNgRJdOPNYIgPJO08iclMf_d5NwWvTYwkBy2w-wwA9Mu74sTiEM3753pW_Lz4tp5flsvvi6v5-bLUVdOIsgUNhknJW4N9C5Iik3XD0DKKtgZxfS372sqq6jkyXnGJVFspjdWIfZPnZ8WnQ25-4s_WxKTuXNRmGHA0fhsVa0UtW0GzcHYQ6uBjDMaqKbg7DHtFQT0hVk-I1RFxNnx8TsaYodmAo3bxn0vW0HAps6496HZuMPsXUtWP1er8_xvlwesyz_ujF8OtErKSXP3qFmp-0cn1ulupZfUI0QqdjQ</recordid><startdate>200601</startdate><enddate>200601</enddate><creator>Delimitis, A.</creator><creator>Gladkov, P.</creator><creator>Komninou, Ph</creator><creator>Kehagias, Th</creator><creator>Arvanitidis, J.</creator><creator>Ves, S.</creator><creator>Katsikini, M.</creator><creator>Dimakis, E.</creator><creator>Georgakilas, A.</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><general>Wiley-VCH</general><scope>BSCLL</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>200601</creationdate><title>Structural and optical characterisation of thick InN epilayers grown with a single or two step growth process on GaN(0001)</title><author>Delimitis, A. ; Gladkov, P. ; Komninou, Ph ; Kehagias, Th ; Arvanitidis, J. ; Ves, S. ; Katsikini, M. ; Dimakis, E. ; Georgakilas, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3886-90c0e27759ead9071a27482af21af406bb7d4f733d5a25357a1cf77efcaad8733</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>61.72.Ff</topic><topic>68.37.Lp</topic><topic>68.55.Jk</topic><topic>78.30.Fs</topic><topic>78.55.Cr</topic><topic>81.05.Ea</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Defects and impurities in crystals; microstructure</topic><topic>Exact sciences and technology</topic><topic>Experimental determination of defects by diffraction and scattering</topic><topic>Iii-v semiconductors</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Photoluminescence</topic><topic>Physics</topic><topic>Structure of solids and liquids; crystallography</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Delimitis, A.</creatorcontrib><creatorcontrib>Gladkov, P.</creatorcontrib><creatorcontrib>Komninou, Ph</creatorcontrib><creatorcontrib>Kehagias, Th</creatorcontrib><creatorcontrib>Arvanitidis, J.</creatorcontrib><creatorcontrib>Ves, S.</creatorcontrib><creatorcontrib>Katsikini, M.</creatorcontrib><creatorcontrib>Dimakis, E.</creatorcontrib><creatorcontrib>Georgakilas, A.</creatorcontrib><collection>Istex</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica status solidi. A, Applications and materials science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Delimitis, A.</au><au>Gladkov, P.</au><au>Komninou, Ph</au><au>Kehagias, Th</au><au>Arvanitidis, J.</au><au>Ves, S.</au><au>Katsikini, M.</au><au>Dimakis, E.</au><au>Georgakilas, A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Structural and optical characterisation of thick InN epilayers grown with a single or two step growth process on GaN(0001)</atitle><jtitle>Physica status solidi. A, Applications and materials science</jtitle><addtitle>phys. stat. sol. (a)</addtitle><date>2006-01</date><risdate>2006</risdate><volume>203</volume><issue>1</issue><spage>162</spage><epage>166</epage><pages>162-166</pages><issn>1862-6300</issn><issn>0031-8965</issn><eissn>1862-6319</eissn><eissn>1521-396X</eissn><coden>PSSABA</coden><abstract>High resolution transmission electron microscopy (HRTEM), Raman spectroscopy and temperature dependent photoluminescence (PL) are employed to compare the structural and optical properties of compact InN films grown by molecular beam epitaxy (MBE) on GaN/Al2O3(0001) with a single‐step (S) or a two‐step (T) growth process. The S‐type film was grown at 300 °C, whilst the T‐type film was nucleated at the same temperature and overgrown at 410 °C. The T‐type film exhibits better structural and optical properties as indicated by a sharper InN/GaN interface, the lower threading dislocations density, sharper Raman peaks and higher intensity PL peaks. Quantitative comparison of the red‐shifted Raman E 22 peak and the lattice constants of S and T samples suggests that the InN epilayers are under different values of stress due to thermal reasons and point defects present in them. The PL emission peak difference of 32 meV between S and T provides further evidence of the unequal residual strain present in InN. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/pssa.200563506</doi><tpages>5</tpages></addata></record> |
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| subjects | 61.72.Ff 68.37.Lp 68.55.Jk 78.30.Fs 78.55.Cr 81.05.Ea Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Exact sciences and technology Experimental determination of defects by diffraction and scattering Iii-v semiconductors Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Physics Structure of solids and liquids crystallography |
| title | Structural and optical characterisation of thick InN epilayers grown with a single or two step growth process on GaN(0001) |
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