Co-electrodeposition and characterization of Cu (In, Ga)Se2 thin films
Cu (In, Ga)Se2(CIGS) thin films were electrodeposited on Mo-coated soda lime glass substrate by the electrodeposition technique. The chemical bath for co-electrodeposition was prepared from copper chloride, indium chloride, gallium chloride and selenous acid. The effect of different chemical bath co...
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| Veröffentlicht in: | Journal of materials science 2006-04, Vol.41 (7), p.1875-1878 |
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| creator | Donglin, Xia Man, Xu Jianzhuang, Li Xiujian, Zhao |
| description | Cu (In, Ga)Se2(CIGS) thin films were electrodeposited on Mo-coated soda lime glass substrate by the electrodeposition technique. The chemical bath for co-electrodeposition was prepared from copper chloride, indium chloride, gallium chloride and selenous acid. The effect of different chemical bath concentration of the CIGS films on the microstructure and electric properties has been investigated. The microstructure and morphology of the selenized CIGS thin films were investigated by X-ray diffraction and scanning electron microscopy. The composition of the selenized CIGS thin films were characterized by energy dispersive spectroscopy. Hall coefficient, Conductivity and Mobility of the selenized CIGS thin films were measured by ACCENT HL5500 Hall System. The results indicate CIGS thin films deviate little from the ideal stoichiometric one and single chalcopyrite structure. At room temperature, electrical conductivity, Hall mobility and charge-carrier concentration of the films vary from 49.63 to 64.56 (\[\Omega \cdot\]cm)‒1,271 to 386 cm2V‒1\[\cdot\]s‒1, 8.026 × 1017 to 1.4 87×1018 cm‒3, respectively, and are dependent on the composition of the films. |
| doi_str_mv | 10.1007/s10853-006-4432-7 |
| format | Article |
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The chemical bath for co-electrodeposition was prepared from copper chloride, indium chloride, gallium chloride and selenous acid. The effect of different chemical bath concentration of the CIGS films on the microstructure and electric properties has been investigated. The microstructure and morphology of the selenized CIGS thin films were investigated by X-ray diffraction and scanning electron microscopy. The composition of the selenized CIGS thin films were characterized by energy dispersive spectroscopy. Hall coefficient, Conductivity and Mobility of the selenized CIGS thin films were measured by ACCENT HL5500 Hall System. The results indicate CIGS thin films deviate little from the ideal stoichiometric one and single chalcopyrite structure. At room temperature, electrical conductivity, Hall mobility and charge-carrier concentration of the films vary from 49.63 to 64.56 (\[\Omega \cdot\]cm)‒1,271 to 386 cm2V‒1\[\cdot\]s‒1, 8.026 × 1017 to 1.4 87×1018 cm‒3, respectively, and are dependent on the composition of the films.</description><identifier>ISSN: 0022-2461</identifier><identifier>EISSN: 1573-4803</identifier><identifier>DOI: 10.1007/s10853-006-4432-7</identifier><identifier>CODEN: JMTSAS</identifier><language>eng</language><publisher>Heidelberg: Springer</publisher><subject>Carrier density ; Chalcopyrite ; Coated electrodes ; Composition ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Copper ; Cross-disciplinary physics: materials science; rheology ; Current carriers ; Electric properties ; Electrical properties of specific thin films ; Electrical resistivity ; Electrodeposition ; Electrodeposition, electroplating ; Electron mobility ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Exact sciences and technology ; Gallium chloride ; Glass substrates ; Hall effect ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Microstructure ; Molybdenum ; Morphology ; Organic chemistry ; Other inorganic semiconductors ; Physics ; Scanning electron microscopy ; Soda-lime glass ; Thin films</subject><ispartof>Journal of materials science, 2006-04, Vol.41 (7), p.1875-1878</ispartof><rights>2006 INIST-CNRS</rights><rights>Journal of Materials Science is a copyright of Springer, (2006). All Rights Reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c280t-7963780fd4ebf3a754a047bc29191c7bec0fdeba4c2e73be6ac64edd812410a73</citedby><cites>FETCH-LOGICAL-c280t-7963780fd4ebf3a754a047bc29191c7bec0fdeba4c2e73be6ac64edd812410a73</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=17728427$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Donglin, Xia</creatorcontrib><creatorcontrib>Man, Xu</creatorcontrib><creatorcontrib>Jianzhuang, Li</creatorcontrib><creatorcontrib>Xiujian, Zhao</creatorcontrib><title>Co-electrodeposition and characterization of Cu (In, Ga)Se2 thin films</title><title>Journal of materials science</title><description>Cu (In, Ga)Se2(CIGS) thin films were electrodeposited on Mo-coated soda lime glass substrate by the electrodeposition technique. The chemical bath for co-electrodeposition was prepared from copper chloride, indium chloride, gallium chloride and selenous acid. The effect of different chemical bath concentration of the CIGS films on the microstructure and electric properties has been investigated. The microstructure and morphology of the selenized CIGS thin films were investigated by X-ray diffraction and scanning electron microscopy. The composition of the selenized CIGS thin films were characterized by energy dispersive spectroscopy. Hall coefficient, Conductivity and Mobility of the selenized CIGS thin films were measured by ACCENT HL5500 Hall System. The results indicate CIGS thin films deviate little from the ideal stoichiometric one and single chalcopyrite structure. At room temperature, electrical conductivity, Hall mobility and charge-carrier concentration of the films vary from 49.63 to 64.56 (\[\Omega \cdot\]cm)‒1,271 to 386 cm2V‒1\[\cdot\]s‒1, 8.026 × 1017 to 1.4 87×1018 cm‒3, respectively, and are dependent on the composition of the films.</description><subject>Carrier density</subject><subject>Chalcopyrite</subject><subject>Coated electrodes</subject><subject>Composition</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Copper</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Current carriers</subject><subject>Electric properties</subject><subject>Electrical properties of specific thin films</subject><subject>Electrical resistivity</subject><subject>Electrodeposition</subject><subject>Electrodeposition, electroplating</subject><subject>Electron mobility</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Gallium chloride</subject><subject>Glass substrates</subject><subject>Hall effect</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Microstructure</subject><subject>Molybdenum</subject><subject>Morphology</subject><subject>Organic chemistry</subject><subject>Other inorganic semiconductors</subject><subject>Physics</subject><subject>Scanning electron microscopy</subject><subject>Soda-lime glass</subject><subject>Thin films</subject><issn>0022-2461</issn><issn>1573-4803</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNqNkU1LxDAQhoMouK7-AG8FURSMTiZp0x6luOvCggf1HNI0ZbN0mzVpD_rr7bqC4MnTwMwzX-9LyDmDOwYg7yODPOUUIKNCcKTygExYKjkVOfBDMgFApCgydkxOYlwDQCqRTcis9NS21vTB13bro-ud7xLd1YlZ6aBNb4P71N9J3yTlkFwvuttkrm9eLCb9ynVJ49pNPCVHjW6jPfuJU_I2e3wtn-jyeb4oH5bUYA49lUXGZQ5NLWzVcC1ToUHIymDBCmZkZc1Ys5UWBq3klc20yYSt65yhYKAln5Kr_dxt8O-Djb3auGhs2-rO-iEqHBeIQop_gCnDLGcjePEHXPshdOMTCjEt5KjbqOCUsD1lgo8x2EZtg9vo8KEYqJ0Bam-AGg1QOwPU7tbLn8k6Gt02QXfGxd9GKTEXKPkXNVWDrQ</recordid><startdate>200604</startdate><enddate>200604</enddate><creator>Donglin, Xia</creator><creator>Man, Xu</creator><creator>Jianzhuang, Li</creator><creator>Xiujian, Zhao</creator><general>Springer</general><general>Springer Nature B.V</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M7S</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>H8G</scope></search><sort><creationdate>200604</creationdate><title>Co-electrodeposition and characterization of Cu (In, Ga)Se2 thin films</title><author>Donglin, Xia ; Man, Xu ; Jianzhuang, Li ; Xiujian, Zhao</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c280t-7963780fd4ebf3a754a047bc29191c7bec0fdeba4c2e73be6ac64edd812410a73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Carrier density</topic><topic>Chalcopyrite</topic><topic>Coated electrodes</topic><topic>Composition</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Copper</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Current carriers</topic><topic>Electric properties</topic><topic>Electrical properties of specific thin films</topic><topic>Electrical resistivity</topic><topic>Electrodeposition</topic><topic>Electrodeposition, electroplating</topic><topic>Electron mobility</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Gallium chloride</topic><topic>Glass substrates</topic><topic>Hall effect</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Microstructure</topic><topic>Molybdenum</topic><topic>Morphology</topic><topic>Organic chemistry</topic><topic>Other inorganic semiconductors</topic><topic>Physics</topic><topic>Scanning electron microscopy</topic><topic>Soda-lime glass</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Donglin, Xia</creatorcontrib><creatorcontrib>Man, Xu</creatorcontrib><creatorcontrib>Jianzhuang, Li</creatorcontrib><creatorcontrib>Xiujian, Zhao</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Copper Technical Reference Library</collection><jtitle>Journal of materials science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Donglin, Xia</au><au>Man, Xu</au><au>Jianzhuang, Li</au><au>Xiujian, Zhao</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Co-electrodeposition and characterization of Cu (In, Ga)Se2 thin films</atitle><jtitle>Journal of materials science</jtitle><date>2006-04</date><risdate>2006</risdate><volume>41</volume><issue>7</issue><spage>1875</spage><epage>1878</epage><pages>1875-1878</pages><issn>0022-2461</issn><eissn>1573-4803</eissn><coden>JMTSAS</coden><abstract>Cu (In, Ga)Se2(CIGS) thin films were electrodeposited on Mo-coated soda lime glass substrate by the electrodeposition technique. The chemical bath for co-electrodeposition was prepared from copper chloride, indium chloride, gallium chloride and selenous acid. The effect of different chemical bath concentration of the CIGS films on the microstructure and electric properties has been investigated. The microstructure and morphology of the selenized CIGS thin films were investigated by X-ray diffraction and scanning electron microscopy. The composition of the selenized CIGS thin films were characterized by energy dispersive spectroscopy. Hall coefficient, Conductivity and Mobility of the selenized CIGS thin films were measured by ACCENT HL5500 Hall System. The results indicate CIGS thin films deviate little from the ideal stoichiometric one and single chalcopyrite structure. At room temperature, electrical conductivity, Hall mobility and charge-carrier concentration of the films vary from 49.63 to 64.56 (\[\Omega \cdot\]cm)‒1,271 to 386 cm2V‒1\[\cdot\]s‒1, 8.026 × 1017 to 1.4 87×1018 cm‒3, respectively, and are dependent on the composition of the films.</abstract><cop>Heidelberg</cop><pub>Springer</pub><doi>10.1007/s10853-006-4432-7</doi><tpages>4</tpages></addata></record> |
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| subjects | Carrier density Chalcopyrite Coated electrodes Composition Condensed matter: electronic structure, electrical, magnetic, and optical properties Copper Cross-disciplinary physics: materials science rheology Current carriers Electric properties Electrical properties of specific thin films Electrical resistivity Electrodeposition Electrodeposition, electroplating Electron mobility Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Gallium chloride Glass substrates Hall effect Materials science Methods of deposition of films and coatings film growth and epitaxy Microstructure Molybdenum Morphology Organic chemistry Other inorganic semiconductors Physics Scanning electron microscopy Soda-lime glass Thin films |
| title | Co-electrodeposition and characterization of Cu (In, Ga)Se2 thin films |
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