Characteristics and Ionization Coefficient Extraction of 1kV 4H-SiC Implanted Anode PiN Rectifiers with Near Ideal Performance Fabricated Using AlN Capped Annealing
4H-SiC PiN rectifiers with implanted anode and single-zone JTE were fabricated using AlN capped anneal. The surface damage during the high temperature activation anneal is significantly reduced by using AlN capped anneal. The forward drop of the PiN rectifiers at 100A/cm2 is 3.0V while the leakage c...
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| Veröffentlicht in: | Materials science forum 2006-10, Vol.527-529, p.1367-1370 |
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| creator | Scozzie, Charles Chow, T. Paul Zhu, Lin Ervin, Matthew H. Derenge, Michael A. Venkatesan, T. Agarwal, Anant K. Vispute, R.D. Losee, Peter A. Jones, Kenneth A. Shah, Pankaj B. |
| description | 4H-SiC PiN rectifiers with implanted anode and single-zone JTE were fabricated using
AlN capped anneal. The surface damage during the high temperature activation anneal is
significantly reduced by using AlN capped anneal. The forward drop of the PiN rectifiers at
100A/cm2 is 3.0V while the leakage current is less than 10-7A/cm2 up to 90% breakdown voltage at
room temperature. With 6μm thick and 2×1016cm-3 doped drift layer, the PiN rectifiers can achieve
near ideal breakdown voltage up to 1050V. Hole impact ionization rate was extracted and
compared with previously reported results. |
| doi_str_mv | 10.4028/www.scientific.net/MSF.527-529.1367 |
| format | Article |
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AlN capped anneal. The surface damage during the high temperature activation anneal is
significantly reduced by using AlN capped anneal. The forward drop of the PiN rectifiers at
100A/cm2 is 3.0V while the leakage current is less than 10-7A/cm2 up to 90% breakdown voltage at
room temperature. With 6μm thick and 2×1016cm-3 doped drift layer, the PiN rectifiers can achieve
near ideal breakdown voltage up to 1050V. Hole impact ionization rate was extracted and
compared with previously reported results.</description><identifier>ISSN: 0255-5476</identifier><identifier>ISSN: 1662-9752</identifier><identifier>EISSN: 1662-9752</identifier><identifier>DOI: 10.4028/www.scientific.net/MSF.527-529.1367</identifier><language>eng</language><publisher>Trans Tech Publications Ltd</publisher><ispartof>Materials science forum, 2006-10, Vol.527-529, p.1367-1370</ispartof><rights>2006 Trans Tech Publications Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c1537-e30fdf2dcbf72adbfb7d49b738b7fb6ad6cb4b688d0daa1cdf0bc0a980e5aa9e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttps://www.scientific.net/Image/TitleCover/55?width=600</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Scozzie, Charles</creatorcontrib><creatorcontrib>Chow, T. Paul</creatorcontrib><creatorcontrib>Zhu, Lin</creatorcontrib><creatorcontrib>Ervin, Matthew H.</creatorcontrib><creatorcontrib>Derenge, Michael A.</creatorcontrib><creatorcontrib>Venkatesan, T.</creatorcontrib><creatorcontrib>Agarwal, Anant K.</creatorcontrib><creatorcontrib>Vispute, R.D.</creatorcontrib><creatorcontrib>Losee, Peter A.</creatorcontrib><creatorcontrib>Jones, Kenneth A.</creatorcontrib><creatorcontrib>Shah, Pankaj B.</creatorcontrib><title>Characteristics and Ionization Coefficient Extraction of 1kV 4H-SiC Implanted Anode PiN Rectifiers with Near Ideal Performance Fabricated Using AlN Capped Annealing</title><title>Materials science forum</title><description>4H-SiC PiN rectifiers with implanted anode and single-zone JTE were fabricated using
AlN capped anneal. The surface damage during the high temperature activation anneal is
significantly reduced by using AlN capped anneal. The forward drop of the PiN rectifiers at
100A/cm2 is 3.0V while the leakage current is less than 10-7A/cm2 up to 90% breakdown voltage at
room temperature. With 6μm thick and 2×1016cm-3 doped drift layer, the PiN rectifiers can achieve
near ideal breakdown voltage up to 1050V. Hole impact ionization rate was extracted and
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AlN capped anneal. The surface damage during the high temperature activation anneal is
significantly reduced by using AlN capped anneal. The forward drop of the PiN rectifiers at
100A/cm2 is 3.0V while the leakage current is less than 10-7A/cm2 up to 90% breakdown voltage at
room temperature. With 6μm thick and 2×1016cm-3 doped drift layer, the PiN rectifiers can achieve
near ideal breakdown voltage up to 1050V. Hole impact ionization rate was extracted and
compared with previously reported results.</abstract><pub>Trans Tech Publications Ltd</pub><doi>10.4028/www.scientific.net/MSF.527-529.1367</doi><tpages>4</tpages></addata></record> |
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| title | Characteristics and Ionization Coefficient Extraction of 1kV 4H-SiC Implanted Anode PiN Rectifiers with Near Ideal Performance Fabricated Using AlN Capped Annealing |
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