Orientation-dependent properties of aluminum nitride single crystals

We have measured the optical properties of different facets and different growth zones in AlN bulk single crystals grown by physical vapor transport. These crystals have a pronounced zonal structure. The systematic investigation shows that absorption and luminescence properties are similar to AlN cr...

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Veröffentlicht in:Physica status solidi. C 2006-06, Vol.3 (6), p.1902-1906
Hauptverfasser: Bickermann, M., Heimann, P., Epelbaum, B. M.
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container_title Physica status solidi. C
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creator Bickermann, M.
Heimann, P.
Epelbaum, B. M.
description We have measured the optical properties of different facets and different growth zones in AlN bulk single crystals grown by physical vapor transport. These crystals have a pronounced zonal structure. The systematic investigation shows that absorption and luminescence properties are similar to AlN crystals and epitaxial layers grown with other techniques. However, the intensity and position of below band‐gap features was found to vary strongly with the zone or facet investigated. We conclude that intrinsic defect formation and impurity concentration strongly depend on the growth direction. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
doi_str_mv 10.1002/pssc.200565255
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_29617304</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>29617304</sourcerecordid><originalsourceid>FETCH-LOGICAL-c4245-5ae33d39e20ea5bca93e697c332befa97973ee6561450fcf59c6776e239b22353</originalsourceid><addsrcrecordid>eNqFkE1LAzEQhhdRsFavnvfkbWuS2STmKK22QrGFKnoLaXZWovtlsov237tlpXjz9M7A8wzDG0WXlEwoIey6CcFOGCFccMb5UTSigpKEipQd9_ONYIkATk-jsxDeCQFOqBhFs5V3WLWmdXWVZNhglfVr3Pi6Qd86DHGdx6boSld1ZVy51rsM4-CqtwJj63ehNUU4j07yPvDiN8fR8_3d03SRLFfzh-ntMrEpS3nCDQJkoJARNHxrjQIUSloAtsXcKKkkIAouaMpJbnOurJBSIAO1ZQw4jKOr4W7_3meHodWlCxaLwlRYd0EzJagEkvbgZACtr0PwmOvGu9L4naZE78vS-7L0oaxeUIPw5Qrc_UPr9WYz_esmg-tCi98H1_gPLSRIrl8e53pG-PoV5ELP4AeJQ35O</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>29617304</pqid></control><display><type>article</type><title>Orientation-dependent properties of aluminum nitride single crystals</title><source>Wiley Online Library Journals Frontfile Complete</source><creator>Bickermann, M. ; Heimann, P. ; Epelbaum, B. M.</creator><creatorcontrib>Bickermann, M. ; Heimann, P. ; Epelbaum, B. M.</creatorcontrib><description>We have measured the optical properties of different facets and different growth zones in AlN bulk single crystals grown by physical vapor transport. These crystals have a pronounced zonal structure. The systematic investigation shows that absorption and luminescence properties are similar to AlN crystals and epitaxial layers grown with other techniques. However, the intensity and position of below band‐gap features was found to vary strongly with the zone or facet investigated. We conclude that intrinsic defect formation and impurity concentration strongly depend on the growth direction. (© 2006 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</description><identifier>ISSN: 1862-6351</identifier><identifier>ISSN: 1610-1634</identifier><identifier>EISSN: 1610-1642</identifier><identifier>DOI: 10.1002/pssc.200565255</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>78.40.Fy ; 78.55.Cr ; 81.05.Ea ; 81.10.Bk</subject><ispartof>Physica status solidi. C, 2006-06, Vol.3 (6), p.1902-1906</ispartof><rights>Copyright © 2006 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c4245-5ae33d39e20ea5bca93e697c332befa97973ee6561450fcf59c6776e239b22353</citedby><cites>FETCH-LOGICAL-c4245-5ae33d39e20ea5bca93e697c332befa97973ee6561450fcf59c6776e239b22353</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fpssc.200565255$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fpssc.200565255$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,777,781,1412,27905,27906,45555,45556</link.rule.ids></links><search><creatorcontrib>Bickermann, M.</creatorcontrib><creatorcontrib>Heimann, P.</creatorcontrib><creatorcontrib>Epelbaum, B. M.</creatorcontrib><title>Orientation-dependent properties of aluminum nitride single crystals</title><title>Physica status solidi. C</title><addtitle>Phys. Status Solidi (c)</addtitle><description>We have measured the optical properties of different facets and different growth zones in AlN bulk single crystals grown by physical vapor transport. These crystals have a pronounced zonal structure. The systematic investigation shows that absorption and luminescence properties are similar to AlN crystals and epitaxial layers grown with other techniques. However, the intensity and position of below band‐gap features was found to vary strongly with the zone or facet investigated. We conclude that intrinsic defect formation and impurity concentration strongly depend on the growth direction. (© 2006 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</description><subject>78.40.Fy</subject><subject>78.55.Cr</subject><subject>81.05.Ea</subject><subject>81.10.Bk</subject><issn>1862-6351</issn><issn>1610-1634</issn><issn>1610-1642</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNqFkE1LAzEQhhdRsFavnvfkbWuS2STmKK22QrGFKnoLaXZWovtlsov237tlpXjz9M7A8wzDG0WXlEwoIey6CcFOGCFccMb5UTSigpKEipQd9_ONYIkATk-jsxDeCQFOqBhFs5V3WLWmdXWVZNhglfVr3Pi6Qd86DHGdx6boSld1ZVy51rsM4-CqtwJj63ehNUU4j07yPvDiN8fR8_3d03SRLFfzh-ntMrEpS3nCDQJkoJARNHxrjQIUSloAtsXcKKkkIAouaMpJbnOurJBSIAO1ZQw4jKOr4W7_3meHodWlCxaLwlRYd0EzJagEkvbgZACtr0PwmOvGu9L4naZE78vS-7L0oaxeUIPw5Qrc_UPr9WYz_esmg-tCi98H1_gPLSRIrl8e53pG-PoV5ELP4AeJQ35O</recordid><startdate>200606</startdate><enddate>200606</enddate><creator>Bickermann, M.</creator><creator>Heimann, P.</creator><creator>Epelbaum, B. M.</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>200606</creationdate><title>Orientation-dependent properties of aluminum nitride single crystals</title><author>Bickermann, M. ; Heimann, P. ; Epelbaum, B. M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c4245-5ae33d39e20ea5bca93e697c332befa97973ee6561450fcf59c6776e239b22353</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>78.40.Fy</topic><topic>78.55.Cr</topic><topic>81.05.Ea</topic><topic>81.10.Bk</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bickermann, M.</creatorcontrib><creatorcontrib>Heimann, P.</creatorcontrib><creatorcontrib>Epelbaum, B. M.</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica status solidi. C</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bickermann, M.</au><au>Heimann, P.</au><au>Epelbaum, B. M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Orientation-dependent properties of aluminum nitride single crystals</atitle><jtitle>Physica status solidi. C</jtitle><addtitle>Phys. Status Solidi (c)</addtitle><date>2006-06</date><risdate>2006</risdate><volume>3</volume><issue>6</issue><spage>1902</spage><epage>1906</epage><pages>1902-1906</pages><issn>1862-6351</issn><issn>1610-1634</issn><eissn>1610-1642</eissn><abstract>We have measured the optical properties of different facets and different growth zones in AlN bulk single crystals grown by physical vapor transport. These crystals have a pronounced zonal structure. The systematic investigation shows that absorption and luminescence properties are similar to AlN crystals and epitaxial layers grown with other techniques. However, the intensity and position of below band‐gap features was found to vary strongly with the zone or facet investigated. We conclude that intrinsic defect formation and impurity concentration strongly depend on the growth direction. (© 2006 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/pssc.200565255</doi><tpages>5</tpages></addata></record>
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source Wiley Online Library Journals Frontfile Complete
subjects 78.40.Fy
78.55.Cr
81.05.Ea
81.10.Bk
title Orientation-dependent properties of aluminum nitride single crystals
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-19T04%3A33%3A51IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Orientation-dependent%20properties%20of%20aluminum%20nitride%20single%20crystals&rft.jtitle=Physica%20status%20solidi.%20C&rft.au=Bickermann,%20M.&rft.date=2006-06&rft.volume=3&rft.issue=6&rft.spage=1902&rft.epage=1906&rft.pages=1902-1906&rft.issn=1862-6351&rft.eissn=1610-1642&rft_id=info:doi/10.1002/pssc.200565255&rft_dat=%3Cproquest_cross%3E29617304%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=29617304&rft_id=info:pmid/&rfr_iscdi=true