Silicon nitride films by chemical vapor deposition in fluidized bed reactors at atmospheric pressure (AP/FBR-CVD)
Silicon nitride thin films with thicknesses around 1 μm were deposited on AISI316 steel by Chemical Vapor Deposition in a Fluidized Bed Reactor at Atmospheric Pressure (AP/FBR-CVD). The films were obtained by reaction of SiCl 4 and NH 3 in a reducing atmosphere at temperatures in the range 725–775 °...
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| Veröffentlicht in: | Surface & coatings technology 2005-11, Vol.200 (5), p.1719-1723 |
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| container_issue | 5 |
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| container_title | Surface & coatings technology |
| container_volume | 200 |
| creator | Perez-Mariano, J. Borros, S. Picas, J.A. Forn, A. Colominas, C. |
| description | Silicon nitride thin films with thicknesses around 1 μm were deposited on AISI316 steel by Chemical Vapor Deposition in a Fluidized Bed Reactor at Atmospheric Pressure (AP/FBR-CVD). The films were obtained by reaction of SiCl
4 and NH
3 in a reducing atmosphere at temperatures in the range 725–775 °C. They were amorphous and substoichiometric. Activation of the bed particles through alternating reaction steps resulted in a higher deposition rate. The formation of chromium nitride was detected for several microns beneath the film. The deposition temperature was found to have a great influence in their morphology and mechanical properties. The coatings presented hardness values up to 26 GPa. |
| doi_str_mv | 10.1016/j.surfcoat.2005.08.069 |
| format | Article |
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3 in a reducing atmosphere at temperatures in the range 725–775 °C. They were amorphous and substoichiometric. Activation of the bed particles through alternating reaction steps resulted in a higher deposition rate. The formation of chromium nitride was detected for several microns beneath the film. The deposition temperature was found to have a great influence in their morphology and mechanical properties. The coatings presented hardness values up to 26 GPa.</description><identifier>ISSN: 0257-8972</identifier><identifier>EISSN: 1879-3347</identifier><identifier>DOI: 10.1016/j.surfcoat.2005.08.069</identifier><identifier>CODEN: SCTEEJ</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Applied sciences ; Chemical Vapor Deposition ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; FBR-CVD ; Fluidized bed ; Materials science ; Metals. Metallurgy ; Other topics in materials science ; Physics ; Production techniques ; Silicon nitride ; Surface treatment</subject><ispartof>Surface & coatings technology, 2005-11, Vol.200 (5), p.1719-1723</ispartof><rights>2005 Elsevier B.V.</rights><rights>2006 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c404t-8784bfef0cb731e694d3840e5a60870537a4abedb6f8d91060b08f3af7f719803</citedby><cites>FETCH-LOGICAL-c404t-8784bfef0cb731e694d3840e5a60870537a4abedb6f8d91060b08f3af7f719803</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0257897205008923$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,3537,23909,23910,25118,27901,27902,65306</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=17494272$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Perez-Mariano, J.</creatorcontrib><creatorcontrib>Borros, S.</creatorcontrib><creatorcontrib>Picas, J.A.</creatorcontrib><creatorcontrib>Forn, A.</creatorcontrib><creatorcontrib>Colominas, C.</creatorcontrib><title>Silicon nitride films by chemical vapor deposition in fluidized bed reactors at atmospheric pressure (AP/FBR-CVD)</title><title>Surface & coatings technology</title><description>Silicon nitride thin films with thicknesses around 1 μm were deposited on AISI316 steel by Chemical Vapor Deposition in a Fluidized Bed Reactor at Atmospheric Pressure (AP/FBR-CVD). The films were obtained by reaction of SiCl
4 and NH
3 in a reducing atmosphere at temperatures in the range 725–775 °C. They were amorphous and substoichiometric. Activation of the bed particles through alternating reaction steps resulted in a higher deposition rate. The formation of chromium nitride was detected for several microns beneath the film. The deposition temperature was found to have a great influence in their morphology and mechanical properties. The coatings presented hardness values up to 26 GPa.</description><subject>Applied sciences</subject><subject>Chemical Vapor Deposition</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>FBR-CVD</subject><subject>Fluidized bed</subject><subject>Materials science</subject><subject>Metals. Metallurgy</subject><subject>Other topics in materials science</subject><subject>Physics</subject><subject>Production techniques</subject><subject>Silicon nitride</subject><subject>Surface treatment</subject><issn>0257-8972</issn><issn>1879-3347</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNqFkU9v1DAQxS0EEkvhKyBfQHBIOkmc2L5RthSQKlGVP1fLccbqrJI4tbOV2k-PV1vEsdKM5vKbeaP3GHtbQVlB1Z3uyrSP3gW7ljVAW4IqodPP2KZSUhdNI-RztoG6lYXSsn7JXqW0A4BKarFhtz9pJBdmPtMaaUDuaZwS7--5u8GJnB35nV1C5AMuIdFKGaWZ-3FPAz3gwPvcEa1bQ0zcrrmmkJYbjOT4EjHl35B_OLs6vfh8XWz_nH98zV54OyZ88zhP2O-LL7-234rLH1-_b88uCydArIWSSvQePbheNhV2WgyNEoCt7UBJaBtphc3ifefVoCvooAflG-ull5VW0Jyw98e7Swy3e0yrmSg5HEc7Y9gnU-s2Y618GlSdbhUcLnZH0MWQUkRvlkiTjfemAnOIwuzMvyjMIQoDyuQo8uK7RwWbsqM-2tlR-r8thRa1rDP36chh9uWOMJrkCGeHA0V0qxkCPSX1F4pgo2s</recordid><startdate>20051121</startdate><enddate>20051121</enddate><creator>Perez-Mariano, J.</creator><creator>Borros, S.</creator><creator>Picas, J.A.</creator><creator>Forn, A.</creator><creator>Colominas, C.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>7TB</scope><scope>FR3</scope></search><sort><creationdate>20051121</creationdate><title>Silicon nitride films by chemical vapor deposition in fluidized bed reactors at atmospheric pressure (AP/FBR-CVD)</title><author>Perez-Mariano, J. ; Borros, S. ; Picas, J.A. ; Forn, A. ; Colominas, C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c404t-8784bfef0cb731e694d3840e5a60870537a4abedb6f8d91060b08f3af7f719803</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Applied sciences</topic><topic>Chemical Vapor Deposition</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>FBR-CVD</topic><topic>Fluidized bed</topic><topic>Materials science</topic><topic>Metals. Metallurgy</topic><topic>Other topics in materials science</topic><topic>Physics</topic><topic>Production techniques</topic><topic>Silicon nitride</topic><topic>Surface treatment</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Perez-Mariano, J.</creatorcontrib><creatorcontrib>Borros, S.</creatorcontrib><creatorcontrib>Picas, J.A.</creatorcontrib><creatorcontrib>Forn, A.</creatorcontrib><creatorcontrib>Colominas, C.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Engineering Research Database</collection><jtitle>Surface & coatings technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Perez-Mariano, J.</au><au>Borros, S.</au><au>Picas, J.A.</au><au>Forn, A.</au><au>Colominas, C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Silicon nitride films by chemical vapor deposition in fluidized bed reactors at atmospheric pressure (AP/FBR-CVD)</atitle><jtitle>Surface & coatings technology</jtitle><date>2005-11-21</date><risdate>2005</risdate><volume>200</volume><issue>5</issue><spage>1719</spage><epage>1723</epage><pages>1719-1723</pages><issn>0257-8972</issn><eissn>1879-3347</eissn><coden>SCTEEJ</coden><abstract>Silicon nitride thin films with thicknesses around 1 μm were deposited on AISI316 steel by Chemical Vapor Deposition in a Fluidized Bed Reactor at Atmospheric Pressure (AP/FBR-CVD). The films were obtained by reaction of SiCl
4 and NH
3 in a reducing atmosphere at temperatures in the range 725–775 °C. They were amorphous and substoichiometric. Activation of the bed particles through alternating reaction steps resulted in a higher deposition rate. The formation of chromium nitride was detected for several microns beneath the film. The deposition temperature was found to have a great influence in their morphology and mechanical properties. The coatings presented hardness values up to 26 GPa.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/j.surfcoat.2005.08.069</doi><tpages>5</tpages></addata></record> |
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| identifier | ISSN: 0257-8972 |
| ispartof | Surface & coatings technology, 2005-11, Vol.200 (5), p.1719-1723 |
| issn | 0257-8972 1879-3347 |
| language | eng |
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| source | Elsevier ScienceDirect Journals |
| subjects | Applied sciences Chemical Vapor Deposition Cross-disciplinary physics: materials science rheology Exact sciences and technology FBR-CVD Fluidized bed Materials science Metals. Metallurgy Other topics in materials science Physics Production techniques Silicon nitride Surface treatment |
| title | Silicon nitride films by chemical vapor deposition in fluidized bed reactors at atmospheric pressure (AP/FBR-CVD) |
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