Temperature programmed desorption of F-doped SnO2 films deposited by inverted pyrosol technique

Fluorine-doped tin dioxide (FTO) films were deposited on silicon wafers by inverted pyrosol technique using solutions with different doping concentration (F/Sn=0.0,0.1,0.75 and 2.50). The physical and electrical properties of the deposited films were analyzed by SEM, XRF, resistivity measurement by...

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Veröffentlicht in:	Journal of thermal analysis and calorimetry 2006-09, Vol.85 (3), p.811-815
Hauptverfasser:	AUKKARAVITTAYAPUN, S, THANACHAYANONT, C, THEAPSIRI, T, VEERASAI, W, SAWADA, Y, KONDO, T, TOKIWA, S, NISHIDE, T
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Optoelectronic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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