Epitaxial growth of Cu2ZnSnS4 thin films by pulsed laser deposition

Cu2ZnSnS4 thin films were grown epitaxially on GaP substrates by pulsed laser deposition (PLD). The band gap of the films was about 1.5 eV from the absorption spectra. In XRD patterns, two CTZS peaks, (004) and (008), were observed at the vicinity of GaP peaks of (200) and (400), respectively. The Cu2ZnSnS4 thin films deposited at substrate temperatures of 350 and 400 °C were nearly stoichiometric and showed 4 poles observed at about 48° in pole figure measurement, indicating that the samples were oriented in plane. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)