A redundant metal-polyimide thin film interconnection process for wafer scale dimensions
The expected defect modes, and the predominance of a single mode, for wafer-scale interconnections produced using typical thin-film processing techniques are discussed. A process using redundancy in the vertical direction to eliminate the dominant defect mode is presented with calculations illustrat...
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| Veröffentlicht in: | IEEE transactions on semiconductor manufacturing 1990-11, Vol.3 (4), p.158-167 |
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| container_title | IEEE transactions on semiconductor manufacturing |
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| creator | Michalka, T.L. Lukaszek, W. Meindl, J.D. |
| description | The expected defect modes, and the predominance of a single mode, for wafer-scale interconnections produced using typical thin-film processing techniques are discussed. A process using redundancy in the vertical direction to eliminate the dominant defect mode is presented with calculations illustrating potential yield improvements. Experimental results of an implementation of the redundancy technique using a lift-off process with polyimide dielectric are presented. The process uses a repeatable elemental step capable of producing signal layers, via studs, or reference planes while maintaining good planarity. The basic precepts of the redundant process are verified.< > |
| doi_str_mv | 10.1109/66.61964 |
| format | Article |
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A process using redundancy in the vertical direction to eliminate the dominant defect mode is presented with calculations illustrating potential yield improvements. Experimental results of an implementation of the redundancy technique using a lift-off process with polyimide dielectric are presented. The process uses a repeatable elemental step capable of producing signal layers, via studs, or reference planes while maintaining good planarity. 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A process using redundancy in the vertical direction to eliminate the dominant defect mode is presented with calculations illustrating potential yield improvements. Experimental results of an implementation of the redundancy technique using a lift-off process with polyimide dielectric are presented. The process uses a repeatable elemental step capable of producing signal layers, via studs, or reference planes while maintaining good planarity. The basic precepts of the redundant process are verified.< ></abstract><pub>IEEE</pub><doi>10.1109/66.61964</doi><tpages>10</tpages></addata></record> |
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| ispartof | IEEE transactions on semiconductor manufacturing, 1990-11, Vol.3 (4), p.158-167 |
| issn | 0894-6507 1558-2345 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_29584431 |
| source | IEEE Electronic Library (IEL) |
| subjects | Dielectric thin films Fabrication Integrated circuit interconnections Metallization Polyimides Signal processing Substrates Transistors Very large scale integration |
| title | A redundant metal-polyimide thin film interconnection process for wafer scale dimensions |
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