Selective effect of ion/surface interaction in low frequency PACVD of SIC:H films: Part B. Microstructural study

A capacitively coupled low frequency PACVD device ( ν = 50 kHz, DC bias: | V dc| = 0 to 400 V) is used to deposit hard amorphous silicon carbide films (a-SiC:H), from the decomposition of precursor tetramethylsilane (TMS) diluted in argon. Such a deposition process induces an ion bombardment of the...

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Veröffentlicht in:	Surface & coatings technology 2006-09, Vol.201 (1), p.174-181
Hauptverfasser:	Soum Glaude, A., Thomas, L., Tomasella, E., Badie, J.M., Berjoan, R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Cross-disciplinary physics: materials science rheology Exact sciences and technology Ion bombardment Materials science Microstructure characterization Other topics in materials science PACVD Physics Silicon carbide Tetramethylsilane
Online-Zugang:	Volltext
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