Performance of Silicon Carbide PiN Diodes Fabricated on Basal Plane Dislocation-Free Epilayers
The nucleation sites of stacking faults (SFs) during forward current stress operation of 4H-SiC PiN diodes were investigated by the electron beam induced current (EBIC) mode of scanning electron microscopy (SEM), and the primary SF nucleation sites were found to be basal plane dislocations (BPDs). D...
Gespeichert in:
| Veröffentlicht in: | Materials science forum 2006-10, Vol.527-529, p.371-374 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 374 |
|---|---|
| container_issue | |
| container_start_page | 371 |
| container_title | Materials science forum |
| container_volume | 527-529 |
| creator | Zhang, Ze Hong Sudarshan, Tangali S. Sadagopan, Priyamvada Maximenko, S.I. Grekov, A.E. |
| description | The nucleation sites of stacking faults (SFs) during forward current stress operation of
4H-SiC PiN diodes were investigated by the electron beam induced current (EBIC) mode of scanning
electron microscopy (SEM), and the primary SF nucleation sites were found to be basal plane
dislocations (BPDs). Damage created on the diode surface also acts as SF nucleation sites. By using a
novel BPD-free SiC epilayer, and avoiding surface damage, PiN diodes were fabricated which did not
exhibit SF formation under current stressing at 200A/cm2 for 3 hours. |
| doi_str_mv | 10.4028/www.scientific.net/MSF.527-529.371 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_29582301</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>29582301</sourcerecordid><originalsourceid>FETCH-LOGICAL-c301t-e571653b827bec1091e498b0df99809c1c1f95316b905e185849f8d9cf9ed3e3</originalsourceid><addsrcrecordid>eNqVkE1LAzEQhoMoWKv_IScPwm6TbLObHO2XCn4U2rMhm51gynZTky2l_96UCp49DHOYl2dmHoQeKMnHhInR4XDIo3HQ9c46k3fQj95Wi5yzKuNM5kVFL9CAliXLZMXZJRoQxnnGx1V5jW5i3BBSUEHLAfpcQrA-bHVnAHuLV651xnd4qkPtGsBL945nzjcQ8ULXwRndQ4NTYKKjbvGy1R2kQGx9mjjfZYsAgOc71-ojhHiLrqxuI9z99iFaL-br6XP2-vH0Mn18zUxBaJ8Br2jJi1qwqgZDiaQwlqImjZVSEGmooVbygpa1JByo4GIsrWiksRKaAoohuj9jd8F_7yH2auuigfZ0nd9HxSQXLG1Kwck5aIKPMYBVu-C2OhwVJepkViWz6s-sSmZVMquS2VRSJbMJMjtD-qC72IP5Uhu_D1168D-YH6KmjD0</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>29582301</pqid></control><display><type>article</type><title>Performance of Silicon Carbide PiN Diodes Fabricated on Basal Plane Dislocation-Free Epilayers</title><source>Scientific.net Journals</source><creator>Zhang, Ze Hong ; Sudarshan, Tangali S. ; Sadagopan, Priyamvada ; Maximenko, S.I. ; Grekov, A.E.</creator><creatorcontrib>Zhang, Ze Hong ; Sudarshan, Tangali S. ; Sadagopan, Priyamvada ; Maximenko, S.I. ; Grekov, A.E.</creatorcontrib><description>The nucleation sites of stacking faults (SFs) during forward current stress operation of
4H-SiC PiN diodes were investigated by the electron beam induced current (EBIC) mode of scanning
electron microscopy (SEM), and the primary SF nucleation sites were found to be basal plane
dislocations (BPDs). Damage created on the diode surface also acts as SF nucleation sites. By using a
novel BPD-free SiC epilayer, and avoiding surface damage, PiN diodes were fabricated which did not
exhibit SF formation under current stressing at 200A/cm2 for 3 hours.</description><identifier>ISSN: 0255-5476</identifier><identifier>ISSN: 1662-9752</identifier><identifier>EISSN: 1662-9752</identifier><identifier>DOI: 10.4028/www.scientific.net/MSF.527-529.371</identifier><language>eng</language><publisher>Trans Tech Publications Ltd</publisher><ispartof>Materials science forum, 2006-10, Vol.527-529, p.371-374</ispartof><rights>2006 Trans Tech Publications Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c301t-e571653b827bec1091e498b0df99809c1c1f95316b905e185849f8d9cf9ed3e3</citedby><cites>FETCH-LOGICAL-c301t-e571653b827bec1091e498b0df99809c1c1f95316b905e185849f8d9cf9ed3e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttps://www.scientific.net/Image/TitleCover/55?width=600</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Zhang, Ze Hong</creatorcontrib><creatorcontrib>Sudarshan, Tangali S.</creatorcontrib><creatorcontrib>Sadagopan, Priyamvada</creatorcontrib><creatorcontrib>Maximenko, S.I.</creatorcontrib><creatorcontrib>Grekov, A.E.</creatorcontrib><title>Performance of Silicon Carbide PiN Diodes Fabricated on Basal Plane Dislocation-Free Epilayers</title><title>Materials science forum</title><description>The nucleation sites of stacking faults (SFs) during forward current stress operation of
4H-SiC PiN diodes were investigated by the electron beam induced current (EBIC) mode of scanning
electron microscopy (SEM), and the primary SF nucleation sites were found to be basal plane
dislocations (BPDs). Damage created on the diode surface also acts as SF nucleation sites. By using a
novel BPD-free SiC epilayer, and avoiding surface damage, PiN diodes were fabricated which did not
exhibit SF formation under current stressing at 200A/cm2 for 3 hours.</description><issn>0255-5476</issn><issn>1662-9752</issn><issn>1662-9752</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNqVkE1LAzEQhoMoWKv_IScPwm6TbLObHO2XCn4U2rMhm51gynZTky2l_96UCp49DHOYl2dmHoQeKMnHhInR4XDIo3HQ9c46k3fQj95Wi5yzKuNM5kVFL9CAliXLZMXZJRoQxnnGx1V5jW5i3BBSUEHLAfpcQrA-bHVnAHuLV651xnd4qkPtGsBL945nzjcQ8ULXwRndQ4NTYKKjbvGy1R2kQGx9mjjfZYsAgOc71-ojhHiLrqxuI9z99iFaL-br6XP2-vH0Mn18zUxBaJ8Br2jJi1qwqgZDiaQwlqImjZVSEGmooVbygpa1JByo4GIsrWiksRKaAoohuj9jd8F_7yH2auuigfZ0nd9HxSQXLG1Kwck5aIKPMYBVu-C2OhwVJepkViWz6s-sSmZVMquS2VRSJbMJMjtD-qC72IP5Uhu_D1168D-YH6KmjD0</recordid><startdate>20061015</startdate><enddate>20061015</enddate><creator>Zhang, Ze Hong</creator><creator>Sudarshan, Tangali S.</creator><creator>Sadagopan, Priyamvada</creator><creator>Maximenko, S.I.</creator><creator>Grekov, A.E.</creator><general>Trans Tech Publications Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20061015</creationdate><title>Performance of Silicon Carbide PiN Diodes Fabricated on Basal Plane Dislocation-Free Epilayers</title><author>Zhang, Ze Hong ; Sudarshan, Tangali S. ; Sadagopan, Priyamvada ; Maximenko, S.I. ; Grekov, A.E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c301t-e571653b827bec1091e498b0df99809c1c1f95316b905e185849f8d9cf9ed3e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhang, Ze Hong</creatorcontrib><creatorcontrib>Sudarshan, Tangali S.</creatorcontrib><creatorcontrib>Sadagopan, Priyamvada</creatorcontrib><creatorcontrib>Maximenko, S.I.</creatorcontrib><creatorcontrib>Grekov, A.E.</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Materials science forum</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhang, Ze Hong</au><au>Sudarshan, Tangali S.</au><au>Sadagopan, Priyamvada</au><au>Maximenko, S.I.</au><au>Grekov, A.E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Performance of Silicon Carbide PiN Diodes Fabricated on Basal Plane Dislocation-Free Epilayers</atitle><jtitle>Materials science forum</jtitle><date>2006-10-15</date><risdate>2006</risdate><volume>527-529</volume><spage>371</spage><epage>374</epage><pages>371-374</pages><issn>0255-5476</issn><issn>1662-9752</issn><eissn>1662-9752</eissn><abstract>The nucleation sites of stacking faults (SFs) during forward current stress operation of
4H-SiC PiN diodes were investigated by the electron beam induced current (EBIC) mode of scanning
electron microscopy (SEM), and the primary SF nucleation sites were found to be basal plane
dislocations (BPDs). Damage created on the diode surface also acts as SF nucleation sites. By using a
novel BPD-free SiC epilayer, and avoiding surface damage, PiN diodes were fabricated which did not
exhibit SF formation under current stressing at 200A/cm2 for 3 hours.</abstract><pub>Trans Tech Publications Ltd</pub><doi>10.4028/www.scientific.net/MSF.527-529.371</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0255-5476 |
| ispartof | Materials science forum, 2006-10, Vol.527-529, p.371-374 |
| issn | 0255-5476 1662-9752 1662-9752 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_29582301 |
| source | Scientific.net Journals |
| title | Performance of Silicon Carbide PiN Diodes Fabricated on Basal Plane Dislocation-Free Epilayers |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T14%3A38%3A14IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Performance%20of%20Silicon%20Carbide%20PiN%20Diodes%20Fabricated%20on%20Basal%20Plane%20Dislocation-Free%20Epilayers&rft.jtitle=Materials%20science%20forum&rft.au=Zhang,%20Ze%20Hong&rft.date=2006-10-15&rft.volume=527-529&rft.spage=371&rft.epage=374&rft.pages=371-374&rft.issn=0255-5476&rft.eissn=1662-9752&rft_id=info:doi/10.4028/www.scientific.net/MSF.527-529.371&rft_dat=%3Cproquest_cross%3E29582301%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=29582301&rft_id=info:pmid/&rfr_iscdi=true |