Properties of dc magnetron sputtered Cu2O films prepared at different sputtering pressures

The sputtering pressures maintained during the deposition of Cu2O films, by dc reactive magnetron sputtering, influence the structural, electrical and optical properties. The crystalline orientation mainly depends on the sputtering pressure. The films deposited at a sputtering pressure of 4 Pa showe...

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Veröffentlicht in:	Applied surface science 2007-04, Vol.253 (12), p.5287-5292
Hauptverfasser:	SIVASANKAR REDDY, A, UTHANNA, S, SREEDHARA REDDY, P
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Deposition by sputtering Electrical properties of specific thin films Electrical properties of specific thin films and layer structures (multilayers, superlattices, quantum wells, wires, and dots) Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity) Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of bulk materials and thin films Physics Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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Zusammenfassung:	The sputtering pressures maintained during the deposition of Cu2O films, by dc reactive magnetron sputtering, influence the structural, electrical and optical properties. The crystalline orientation mainly depends on the sputtering pressure. The films deposited at a sputtering pressure of 4 Pa showed single-phase Cu2O films along (1 1 1) direction. The electrical resistivity of the films increased from 1.1 x 10exp1 Omega cm to 3.2 x 10exp3 Omega cm. The transmittance of the films increased from 69% to 88% with the increase of sputtering pressure from 2.5 Pa to 8 Pa.
ISSN:	0169-4332 1873-5584
DOI:	10.1016/j.apsusc.2006.11.051