Reliability studies of narrow Cu lines
Cu damascene lines with dimensions of 100 nm and less were prepared using adapted standard processes. For metallization standard Cu damascene processes were used, with reduced thicknesses for diffusion barrier and Cu seed layer. The lines thus obtained were subjected to electromigration tests at ele...
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Veröffentlicht in: | Microelectronic engineering 2005-12, Vol.82 (3), p.645-649 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
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