Role of Nanoscale Strain Inhomogeneity on the Light Emission from InGaN Epilayers

InGaN is the basis of a new generation of light‐emitting devices, with enormous technological potential; it is currently one of the most intensively studied semiconductor materials. It is generally accepted that compositional fluctuations resulting from phase segregation are the origin of the high l...

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Veröffentlicht in:	Advanced functional materials 2007-01, Vol.17 (1), p.37-42
Hauptverfasser:	de Sousa Pereira, S M, O'Donnell, K P, da Costa Alves, E J
Format:	Artikel
Sprache:	eng
Schlagworte:	Epitaxial growth Heterostructures Light-emitting materials Nitrides
Online-Zugang:	Volltext
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