Raman scattering from LO–phonon–plasmon coupled modes in Ag-coated GaN nanocrystals
Relationships are studied governing the Raman scattering spectra in GaN nanocrystals grown by HVPE on substrates of oxidized silicon with Ag atoms deposited in a UHV system. It is found that the intensity of an LO–phonon–plasmon coupled mode in GaN nanocrystals is increasing initially as metal atoms...
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Veröffentlicht in: | Applied surface science 2004-08, Vol.235 (3), p.274-278 |
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creator | Bessolov, V.N. Konenkova, E.V. Zhilyaev, Yu.V. Paez Sierra, B.A. Zahn, D.R.T. |
description | Relationships are studied governing the Raman scattering spectra in GaN nanocrystals grown by HVPE on substrates of oxidized silicon with Ag atoms deposited in a UHV system. It is found that the intensity of an LO–phonon–plasmon coupled mode in GaN nanocrystals is increasing initially as metal atoms are deposited on their surface to a thickness of 3
nm and then decreasing. It is suggested that the intensity increase of this mode is due to increasing near-surface barrier height and the space-charge layer width. |
doi_str_mv | 10.1016/j.apsusc.2004.05.100 |
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subjects | GaN nanocrystal Phonon–plasmon mode Raman scattering |
title | Raman scattering from LO–phonon–plasmon coupled modes in Ag-coated GaN nanocrystals |
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