SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor
4H-SiC epitaxial layers have been grown using trichlorosilane (TCS) as the silicon precursor source together with ethylene as the carbon precursor source. A higher C/Si ratio is necessary compared with the silane/ethylene system. This ratio has to be reduced especially at higher Si/H2 ratio because...
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| Veröffentlicht in: | Materials science forum 2006-10, Vol.527-529, p.179-182 |
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| creator | Crippa, Danilo Pistone, Giuseppe Portuese, F. La Via, Francesco Abbondanza, Giuseppe Foti, Gaetano Valente, Gian Luca Reitano, Ricardo Barbera, Milo Mauceri, Marco Abagnale, Giovanni Leone, Stefano |
| description | 4H-SiC epitaxial layers have been grown using trichlorosilane (TCS) as the silicon
precursor source together with ethylene as the carbon precursor source. A higher C/Si ratio is
necessary compared with the silane/ethylene system. This ratio has to be reduced especially at
higher Si/H2 ratio because the step-bunching effect occurs. From the comparison with the process
that uses silane as the silicon precursor, a 15% higher growth rate has been found using TCS
(trichlorosilane) at the same Si/H2 ratio. Furthermore, in the TCS process, the presence of chlorine,
that reduces the possibility of silicon droplet formation, allows to use a high Si/H2 ratio and then to
reach high growth rates (16 *m/h). The obtained results on the growth rates, the surface roughness
and the crystal quality are very promising. |
| doi_str_mv | 10.4028/www.scientific.net/MSF.527-529.179 |
| format | Article |
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precursor source together with ethylene as the carbon precursor source. A higher C/Si ratio is
necessary compared with the silane/ethylene system. This ratio has to be reduced especially at
higher Si/H2 ratio because the step-bunching effect occurs. From the comparison with the process
that uses silane as the silicon precursor, a 15% higher growth rate has been found using TCS
(trichlorosilane) at the same Si/H2 ratio. Furthermore, in the TCS process, the presence of chlorine,
that reduces the possibility of silicon droplet formation, allows to use a high Si/H2 ratio and then to
reach high growth rates (16 *m/h). The obtained results on the growth rates, the surface roughness
and the crystal quality are very promising.</description><identifier>ISSN: 0255-5476</identifier><identifier>ISSN: 1662-9752</identifier><identifier>EISSN: 1662-9752</identifier><identifier>DOI: 10.4028/www.scientific.net/MSF.527-529.179</identifier><language>eng</language><publisher>Trans Tech Publications Ltd</publisher><ispartof>Materials science forum, 2006-10, Vol.527-529, p.179-182</ispartof><rights>2006 Trans Tech Publications Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c367t-9874efe22a67096c28fb532b9b901d2b383c09fba101c75ba3f07495e8dedfbf3</citedby><cites>FETCH-LOGICAL-c367t-9874efe22a67096c28fb532b9b901d2b383c09fba101c75ba3f07495e8dedfbf3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttps://www.scientific.net/Image/TitleCover/55?width=600</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Crippa, Danilo</creatorcontrib><creatorcontrib>Pistone, Giuseppe</creatorcontrib><creatorcontrib>Portuese, F.</creatorcontrib><creatorcontrib>La Via, Francesco</creatorcontrib><creatorcontrib>Abbondanza, Giuseppe</creatorcontrib><creatorcontrib>Foti, Gaetano</creatorcontrib><creatorcontrib>Valente, Gian Luca</creatorcontrib><creatorcontrib>Reitano, Ricardo</creatorcontrib><creatorcontrib>Barbera, Milo</creatorcontrib><creatorcontrib>Mauceri, Marco</creatorcontrib><creatorcontrib>Abagnale, Giovanni</creatorcontrib><creatorcontrib>Leone, Stefano</creatorcontrib><title>SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor</title><title>Materials science forum</title><description>4H-SiC epitaxial layers have been grown using trichlorosilane (TCS) as the silicon
precursor source together with ethylene as the carbon precursor source. A higher C/Si ratio is
necessary compared with the silane/ethylene system. This ratio has to be reduced especially at
higher Si/H2 ratio because the step-bunching effect occurs. From the comparison with the process
that uses silane as the silicon precursor, a 15% higher growth rate has been found using TCS
(trichlorosilane) at the same Si/H2 ratio. Furthermore, in the TCS process, the presence of chlorine,
that reduces the possibility of silicon droplet formation, allows to use a high Si/H2 ratio and then to
reach high growth rates (16 *m/h). The obtained results on the growth rates, the surface roughness
and the crystal quality are very promising.</description><issn>0255-5476</issn><issn>1662-9752</issn><issn>1662-9752</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNqVkF1LwzAYhYMoOKf_IVeiQrskbZrmUuc-hPkB3a5DmiUuo2tn0lL3782Y4LUXL-fm8HDeB4AHjOIUkXzU933sldV1a41Vca3b0WsxjSlhESU8xoyfgQHOMhJxRsk5GCBCaURTll2CK--3CCU4x9kAvBV2HKVzONnbVn5bWcGFPGgHZ67p2w1ceVt_wqWzalM1rvG2krWGd8txcQ-lh4WtrGpq-OG06pxv3DW4MLLy-uY3h2A1nSzH82jxPnsZPy4ilWSsjXjOUm00ITJjiGeK5KakCSl5yRFekzLJE4W4KSVGWDFaysQglnKq87Vem9IkQ3B74u5d89Vp34qd9UpXx3lN5wXhlKYkxaH4dCqqsN47bcTe2Z10B4GROKoUQaX4UymCShFUiqAyHBdBZYA8nyCtk7VvtdqIbdO5Onz4H8wPk-eHHw</recordid><startdate>20061015</startdate><enddate>20061015</enddate><creator>Crippa, Danilo</creator><creator>Pistone, Giuseppe</creator><creator>Portuese, F.</creator><creator>La Via, Francesco</creator><creator>Abbondanza, Giuseppe</creator><creator>Foti, Gaetano</creator><creator>Valente, Gian Luca</creator><creator>Reitano, Ricardo</creator><creator>Barbera, Milo</creator><creator>Mauceri, Marco</creator><creator>Abagnale, Giovanni</creator><creator>Leone, Stefano</creator><general>Trans Tech Publications Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20061015</creationdate><title>SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor</title><author>Crippa, Danilo ; Pistone, Giuseppe ; Portuese, F. ; La Via, Francesco ; Abbondanza, Giuseppe ; Foti, Gaetano ; Valente, Gian Luca ; Reitano, Ricardo ; Barbera, Milo ; Mauceri, Marco ; Abagnale, Giovanni ; Leone, Stefano</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c367t-9874efe22a67096c28fb532b9b901d2b383c09fba101c75ba3f07495e8dedfbf3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Crippa, Danilo</creatorcontrib><creatorcontrib>Pistone, Giuseppe</creatorcontrib><creatorcontrib>Portuese, F.</creatorcontrib><creatorcontrib>La Via, Francesco</creatorcontrib><creatorcontrib>Abbondanza, Giuseppe</creatorcontrib><creatorcontrib>Foti, Gaetano</creatorcontrib><creatorcontrib>Valente, Gian Luca</creatorcontrib><creatorcontrib>Reitano, Ricardo</creatorcontrib><creatorcontrib>Barbera, Milo</creatorcontrib><creatorcontrib>Mauceri, Marco</creatorcontrib><creatorcontrib>Abagnale, Giovanni</creatorcontrib><creatorcontrib>Leone, Stefano</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Materials science forum</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Crippa, Danilo</au><au>Pistone, Giuseppe</au><au>Portuese, F.</au><au>La Via, Francesco</au><au>Abbondanza, Giuseppe</au><au>Foti, Gaetano</au><au>Valente, Gian Luca</au><au>Reitano, Ricardo</au><au>Barbera, Milo</au><au>Mauceri, Marco</au><au>Abagnale, Giovanni</au><au>Leone, Stefano</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor</atitle><jtitle>Materials science forum</jtitle><date>2006-10-15</date><risdate>2006</risdate><volume>527-529</volume><spage>179</spage><epage>182</epage><pages>179-182</pages><issn>0255-5476</issn><issn>1662-9752</issn><eissn>1662-9752</eissn><abstract>4H-SiC epitaxial layers have been grown using trichlorosilane (TCS) as the silicon
precursor source together with ethylene as the carbon precursor source. A higher C/Si ratio is
necessary compared with the silane/ethylene system. This ratio has to be reduced especially at
higher Si/H2 ratio because the step-bunching effect occurs. From the comparison with the process
that uses silane as the silicon precursor, a 15% higher growth rate has been found using TCS
(trichlorosilane) at the same Si/H2 ratio. Furthermore, in the TCS process, the presence of chlorine,
that reduces the possibility of silicon droplet formation, allows to use a high Si/H2 ratio and then to
reach high growth rates (16 *m/h). The obtained results on the growth rates, the surface roughness
and the crystal quality are very promising.</abstract><pub>Trans Tech Publications Ltd</pub><doi>10.4028/www.scientific.net/MSF.527-529.179</doi><tpages>4</tpages></addata></record> |
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| title | SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor |
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