Profile control in high aspect ratio contact hole etching by a capacitively coupled plasma source

Two types of masking methodologies for high aspect ratio deep contact hole etching, photo-resist (PR) masks only and poly-silicon hard masks (poly-HM), have been applied and studied. In order to understand the variation of plasma chemistries, the optical emission spectroscopy has been used to charac...

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Veröffentlicht in:	Microelectronic engineering 2005-10, Vol.82 (2), p.129-135
Hauptverfasser:	Yen, T.F., Chang, K.J., Chiu, K.-F.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Capacitively coupled plasma Contact hole etching Electronics Exact sciences and technology High aspect ratio Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Vertical profile
Online-Zugang:	Volltext
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